| Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Electron Device Letters 40 (1), 67-70, 2018 | 39 | 2018 |
| Reduced contact resistance and improved transistor performance by surface plasma treatment on ohmic regions in AlGaN/GaN HEMT heterostructures YK Yadav, BB Upadhyay, M Meer, S Ganguly, D Saha physica status solidi (a) 215 (9), 1700656, 2018 | 18 | 2018 |
| Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs BB Upadhyay, K Takhar, J Jha, S Ganguly, D Saha Solid-State Electronics 141, 1-6, 2018 | 15 | 2018 |
| Impact of relative gate position on DC and RF characteristics of high performance AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, J Jha, S Ganguly, D Saha IEEE Transactions on Electron Devices 67 (10), 4141-4146, 2020 | 13 | 2020 |
| Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs K Takhar, BB Upadhyay, YK Yadav, S Ganguly, D Saha Applied Surface Science 481, 219-225, 2019 | 13 | 2019 |
| Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts K Takhar, SA Kumar, M Meer, BB Upadhyay, P Upadhyay, D Khachariya, ... Solid-State Electronics 122, 70-74, 2016 | 10 | 2016 |
| Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021 | 9 | 2021 |
| Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors K Takhar, M Meer, BB Upadhyay, S Ganguly, D Saha Solid-State Electronics 131, 39-44, 2017 | 7 | 2017 |
| Thermally grown Nb-oxide for GaN-based MOS-diodes N Bhardwaj, BB Upadhyay, YK Yadav, S Surapaneni, S Ganguly, D Saha Applied Surface Science 572, 151332, 2022 | 4 | 2022 |
| Improvements from SiC substrate thinning in AlGaN/GaN HEMTs: Disparate effects on contacts, access and channel regions B Parvez, J Jha, P Upadhyay, N Bhardwaj, Y Yadav, B Upadhyay, ... IEEE Electron Device Letters 42 (5), 684-687, 2021 | 4 | 2021 |
| Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric N Bhardwaj, BB Upadhyay, B Parvez, P Pohekar, Y Yadav, A Sahu, ... Physica Scripta 98 (1), 015805, 2022 | 3 | 2022 |
| Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors J Jha, BB Upadhyay, K Takhar, N Bhardwaj, S Ganguly, D Saha Journal of Applied Physics 124 (16), 2018 | 3 | 2018 |
| Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures BB Upadhyay, J Jha, K Takhar, S Ganguly, D Saha Journal of Applied Physics 123 (20), 2018 | 3 | 2018 |
| High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric BB Upadhyay, S Surapaneni, YK Yadav, N Bhardwaj, N Suvachintak, ... physica status solidi (a) 219 (12), 2100839, 2022 | 2 | 2022 |
| High Power Broad C-band Amplifier Using AlGan/GaN Based High Electron Mobility Transistors J Jha, Y Yadav, B Upadhyay, S Surapaneni, N Bhardwaj, S Ganguly, ... 2021 8th International Conference on Electrical and Electronics Engineering …, 2021 | 1 | 2021 |
| Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures A Sahu, B Parvez, M Patil, S Basak, J Sahu, BB Upadhyay, S Ganguly, ... Applied Physics Letters 124 (12), 2024 | | 2024 |
| High-Performance GaN HEMTs with I ON/I OFF≈ 1010 and Gate Leakage Current BB UPADHYAY, S SURAPANENI, YK YADAV, N BHARDWAJ, ... Aluminum alloys, 0 | | |
| High performance AlGaN/GaN high electron mobility transistors YK Yadav, BB Upadhyay, M Meer, D Saha | | |
| Improved Ohmic Contacts by Surface Treatment on AlGaN/GaN heterostructures YK Yadav, M Meer, BB Upadhyay, D Saha | | |
Yogendra Kumar YadavProcess/integration modelling, Applied Materials BangaloreVerified email at iitb.ac.in
