| Gallium OXIDE: Properties and applica 498 a review S Stepanov, V Nikolaev, V Bougrov, A Romanov Rev. Adv. Mater. Sci 44, 63-86, 2016 | 808 | 2016 |
| HVPE growth and characterization of ε-Ga2O3 films on various substrates VI Nikolaev, SI Stepanov, AI Pechnikov, SV Shapenkov, MP Scheglov, ... ECS Journal of Solid State Science and Technology 9 (4), 045014, 2020 | 74 | 2020 |
| Strain relaxation in GaN layers grown on porous GaN sublayers M Mynbaeva, A Titkov, A Kryzhanovski, I Kotousova, AS Zubrilov, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1999 | 71 | 1999 |
| Epitaxial growth of (2 01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy VI Nikolaev, AI Pechnikov, SI Stepanov, IP Nikitina, AN Smirnov, ... Materials Science in Semiconductor Processing 47, 16-19, 2016 | 67 | 2016 |
| Growth and characterization of β-Ga2O3 crystals VI Nikolaev, V Maslov, SI Stepanov, AI Pechnikov, V Krymov, IP Nikitina, ... Journal of Crystal Growth 457, 132-136, 2017 | 64 | 2017 |
| Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, VI Nikolaev, ... APL Materials 7 (5), 2019 | 46 | 2019 |
| Editors’ choice—electrical properties and deep traps in α-Ga2O3: Sn films grown on sapphire by halide vapor phase epitaxy AY Polyakov, VI Nikolaev, SI Stepanov, AI Pechnikov, EB Yakimov, ... ECS Journal of Solid State Science and Technology 9 (4), 045003, 2020 | 43 | 2020 |
| Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S Stepanov, WN Wang, BS Yavich, V Bougrov, YT Rebane, YG Shreter Materials Research Society Internet Journal of Nitride Semiconductor …, 2001 | 41 | 2001 |
| Light emitting diode with charge asymmetric resonance tunneling YT Rebane, YG Shreter, BS Yavich, VE Bougrov, SI Stepanov, WN Wang physica status solidi (a) 180 (1), 121-126, 2000 | 39 | 2000 |
| Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy AI Pechnikov, SI Stepanov, AV Chikiryaka, MP Scheglov, MA Odnobludov, ... Semiconductors 53, 780-783, 2019 | 37 | 2019 |
| Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates S Shapenkov, O Vyvenko, E Ubyivovk, O Medvedev, G Varygin, ... physica status solidi (a) 217 (14), 1900892, 2020 | 34 | 2020 |
| CFD optimisation of up-flow vertical HVPE reactor for GaN growth ŁJ Sytniewski, AA Lapkin, S Stepanov, WN Wang Journal of crystal growth 310 (14), 3358-3365, 2008 | 28 | 2008 |
| Degradation and transient currents in III-nitride LEDs YT Rebane, NI Bochkareva, VE Bougrov, DV Tarkhin, YG Shreter, ... Light-Emitting Diodes: Research, Manufacturing, and Applications VII 4996 …, 2003 | 27 | 2003 |
| HVPE growth of α-and ε-Ga2O3 on patterned sapphire substrates VI Nikolaev, AI Pechnikov, VV Nikolaev, MP Scheglov, AV Chikiryaka, ... Journal of Physics: Conference Series 1400 (5), 055049, 2019 | 24 | 2019 |
| HVPE GaN and AlGaN``substrates``for homoepitaxy Y Melnik, A Nikolaev, S Stepanov, I Kikitina, K Vassilevski, A Ankudinov, ... Materials Science Forum 264, 1998 | 24 | 1998 |
| Gas sensors based on pseudohexagonal phase of gallium oxide A Almaev, V Nikolaev, P Butenko, S Stepanov, A Pechnikov, N Yakovlev, ... physica status solidi (b) 259 (2), 2100306, 2022 | 22 | 2022 |
| Hydrogen influence on electrical properties of Pt-contacted α-Ga2O3/ϵ-Ga2O3 structures grown on patterned sapphire substrates AV Almaev, VI Nikolaev, SI Stepanov, AI Pechnikov, AV Chikiryaka, ... Journal of Physics D: Applied Physics 53 (41), 414004, 2020 | 22 | 2020 |
| Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2∕ Ar plasma E Zhirnov, S Stepanov, WN Wang, YG Shreter, DV Takhin, NI Bochkareva Journal of Vacuum Science & Technology A 22 (6), 2336-2341, 2004 | 21 | 2004 |
| Hydrogen sensors based on Pt/α-Ga2O3: Sn/Pt structures AV Almaev, VI Nikolaev, NN Yakovlev, PN Butenko, SI Stepanov, ... Sensors and Actuators B: Chemical 364, 131904, 2022 | 20 | 2022 |
| High quality GaN layers grown by hydride vapor phase epitaxy—a high resolution X-ray diffractometry and synchrotron X-ray topography study J Chaudhuri, C Ignatiev, S Stepanov, D Tsvetkov, A Cherenkov, ... Materials Science and Engineering: B 78 (1), 22-27, 2000 | 20 | 2000 |
Vladislav BougrovInnolume GmbHVerified email at innolume.com
