Han Liu
Han Liu
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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye
ACS Nano 8 (4), 4033–4041, 2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, PD Ye
Chemical Society Reviews 44 (9), 2732-2743, 2015
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS Nano 8 (8), 8292-8299, 2014
Channel length scaling of MoS2 MOSFETs
H Liu, AT Neal, PD Ye
ACS Nano 6 (10), 8563–8569, 2012
Chloride molecular doping technique on 2D materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano Letters 14 (11), 6275-6280, 2014
MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
H Liu, PD Ye
IEEE Electron Device Letters 33, 546-548, 2012
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS Nano 8 (10), 10035-10042, 2014
Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Y Du, H Liu, AT Neal, M Si, PD Ye
IEEE Electron Device Letters 34 (10), 1328-1330, 2013
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye
ACS Nano 8, 1031-1038, 2014
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye
Nano Letters 13 (6), 2640-2646, 2013
The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
H Liu, AT Neal, M Si, Y Du, PD Ye
IEEE Electron Device Letters 37 (7), 795-797, 2014
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
H Liu, K Xu, X Zhang, PD Ye
Applied Physics Letters 100 (15), 152115, 2012
MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide
IEEE Electron Device Letters 35 (5), 599-601, 2014
MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
H Liu, J Gu, P Ye
IEEE Electron Devices Letters 33, 1273-1275, 2012
Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor
AT Neal, H Liu, J Gu, PD Ye
ACS Nano 7 (8), 7077-7082, 2013
Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs
X Luo, Y Rahbarihagh, JCM Hwang, H Liu, Y Du, PD Ye
IEEE Electron Device Letters 35, 1314 - 1316, 2014
High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
ACS nano
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tomanek, PD Ye
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Y Du, L Yang, H Liu, PD Ye
APL Materials 2 (9), 2014
Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM
L Chen, Y Xu, QQ Sun, H Liu, JJ Gu, SJ Ding, DW Zhang
Electron Device Letters, IEEE 31 (4), 356-358, 2010
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