| Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS Nano 8 (4), 4033–4041, 2014 | 6550 | 2014 |
| Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, PD Ye Chemical Society Reviews 44 (9), 2732-2743, 2015 | 1524 | 2015 |
| Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS Nano 8 (8), 8292-8299, 2014 | 1338 | 2014 |
| Channel length scaling of MoS2 MOSFETs H Liu, AT Neal, PD Ye ACS Nano 6 (10), 8563–8569, 2012 | 911 | 2012 |
| Chloride molecular doping technique on 2D materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano Letters 14 (11), 6275-6280, 2014 | 782 | 2014 |
| MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric H Liu, PD Ye IEEE Electron Device Letters 33, 546-548, 2012 | 529* | 2012 |
| Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS Nano 8 (10), 10035-10042, 2014 | 497 | 2014 |
| Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano Letters 13 (6), 2640-2646, 2013 | 398* | 2013 |
| Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances Y Du, H Liu, AT Neal, M Si, PD Ye IEEE Electron Device Letters 34 (10), 1328-1330, 2013 | 300 | 2013 |
| Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye ACS Nano 8, 1031-1038, 2014 | 285 | 2014 |
| The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights H Liu, AT Neal, M Si, Y Du, PD Ye IEEE Electron Device Letters 37 (7), 795-797, 2014 | 201 | 2014 |
| The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition H Liu, K Xu, X Zhang, PD Ye Applied Physics Letters 100 (15), 152115, 2012 | 192 | 2012 |
| MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide IEEE Electron Device Letters 35 (5), 599-601, 2014 | 176 | 2014 |
| MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming H Liu, J Gu, P Ye IEEE Electron Devices Letters 33, 1273-1275, 2012 | 129 | 2012 |
| Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor AT Neal, H Liu, J Gu, PD Ye ACS Nano 7 (8), 7077-7082, 2013 | 122 | 2013 |
| Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs X Luo, Y Rahbarihagh, JCM Hwang, H Liu, Y Du, PD Ye IEEE Electron Device Letters 35, 1314 - 1316, 2014 | 93 | 2014 |
| High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 86 | 2014 |
| Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors Y Du, L Yang, H Liu, PD Ye APL Materials 2 (9), 2014 | 65 | 2014 |
| Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM L Chen, Y Xu, QQ Sun, H Liu, JJ Gu, SJ Ding, DW Zhang Electron Device Letters, IEEE 31 (4), 356-358, 2010 | 63* | 2010 |
| Metal contacts to MoS2: A two-dimensional semiconductor AT Neal, H Liu, JJ Gu, PD Ye Device Research Conference (DRC), 2012 70th Annual, 65-66, 2012 | 62 | 2012 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
