A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022 | 16 | 2022 |
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan Applied Physics Letters 120 (6), 2022 | 10 | 2022 |
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022) FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan IEEE Transactions on Device and Materials Reliability 22 (3), 322-331, 2022 | 5 | 2022 |
Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, EB Frantz, ... Review of Scientific Instruments 93 (11), 2022 | 3 | 2022 |
Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR FV Sharov, SJ Moxim, PM Lenahan, DR Hughart, GS Haase, CG McKay 2021 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2021 | 3 | 2021 |
Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan Applied Physics Letters 120 (6), 2022 | 2 | 2022 |
A computationally efficient discrete pseudomodulation algorithm for real-time magnetic resonance measurements BR Manning, FV Sharov, PM Lenahan Review of Scientific Instruments 93 (1), 2022 | 2 | 2022 |
Applications of Electrically Detected Magnetic Resonance to the Analysis of Technologically Relevant Reliability Mechanisms in Semiconductor Devices FV Sharov The Pennsylvania State University, 2022 | 1 | 2022 |
Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects SJ Moxim, PM Lenahan, FV Sharov, GS Haase, DR Hughart 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020 | 1 | 2020 |
Near zero field magnetoresistance spectroscopy in solid state electronic devices P Lenahan, E Frantz, S King, F Sharov, S Moxim, K Myers, N Harmon, ... Spintronics XVI, PC126561U, 2023 | | 2023 |
Using EDMR to Characterize Deep Level Defects in Novel Solar Cells E Allridge, P Lenahan, F Sharov, A Meyer, C Mule, P Stradins, ... APS March Meeting Abstracts 2023, F42. 001, 2023 | | 2023 |
Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC: H Films FV Sharov, SJ Moxim, MJ Elko, SW King, PM Lenahan 2022 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2022 | | 2022 |
What Can Near-Zero-Field Magnetoresistance Tell Us about Defects in Semiconductors? S Moxim, F Sharov, P Lenahan APS March Meeting Abstracts 2022, Y55. 001, 2022 | | 2022 |
Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System. FV Sharov, SJ Moxim, D Hughart, G Haase, PM Lenahan Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors. SJ Moxim, FV Sharov, D Hughart, G Haase, PM Lenahan Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs. FV Sharov, SJ Moxim, PM Lenahan, G Haase, D Hughart Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
Near-Zero-Field Magnetic Resonance in Silicon-Silicon Dioxide F Sharov Pennsylvania State University, 2018 | | 2018 |
PA, USA, 16802 SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan | | |
SPECIAL SECTION ON IIRW FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan, ... | | |