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Fedor Viktorovich Sharov
Fedor Viktorovich Sharov
The Pennsylvania State University
Verified email at intel.com
Title
Cited by
Cited by
Year
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan
IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022
162022
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan
Applied Physics Letters 120 (6), 2022
102022
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)
FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan
IEEE Transactions on Device and Materials Reliability 22 (3), 322-331, 2022
52022
Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability
SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, EB Frantz, ...
Review of Scientific Instruments 93 (11), 2022
32022
Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR
FV Sharov, SJ Moxim, PM Lenahan, DR Hughart, GS Haase, CG McKay
2021 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2021
32021
Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC
JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan
Applied Physics Letters 120 (6), 2022
22022
A computationally efficient discrete pseudomodulation algorithm for real-time magnetic resonance measurements
BR Manning, FV Sharov, PM Lenahan
Review of Scientific Instruments 93 (1), 2022
22022
Applications of Electrically Detected Magnetic Resonance to the Analysis of Technologically Relevant Reliability Mechanisms in Semiconductor Devices
FV Sharov
The Pennsylvania State University, 2022
12022
Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects
SJ Moxim, PM Lenahan, FV Sharov, GS Haase, DR Hughart
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020
12020
Near zero field magnetoresistance spectroscopy in solid state electronic devices
P Lenahan, E Frantz, S King, F Sharov, S Moxim, K Myers, N Harmon, ...
Spintronics XVI, PC126561U, 2023
2023
Using EDMR to Characterize Deep Level Defects in Novel Solar Cells
E Allridge, P Lenahan, F Sharov, A Meyer, C Mule, P Stradins, ...
APS March Meeting Abstracts 2023, F42. 001, 2023
2023
Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC: H Films
FV Sharov, SJ Moxim, MJ Elko, SW King, PM Lenahan
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2022
2022
What Can Near-Zero-Field Magnetoresistance Tell Us about Defects in Semiconductors?
S Moxim, F Sharov, P Lenahan
APS March Meeting Abstracts 2022, Y55. 001, 2022
2022
Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System.
FV Sharov, SJ Moxim, D Hughart, G Haase, PM Lenahan
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021
2021
Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
SJ Moxim, FV Sharov, D Hughart, G Haase, PM Lenahan
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021
2021
Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.
FV Sharov, SJ Moxim, PM Lenahan, G Haase, D Hughart
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021
2021
Near-Zero-Field Magnetic Resonance in Silicon-Silicon Dioxide
F Sharov
Pennsylvania State University, 2018
2018
PA, USA, 16802
SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan
SPECIAL SECTION ON IIRW
FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan, ...
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