| Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ... Apl Materials 4 (4), 2016 | 141 | 2016 |
| Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu Optics express 25 (5), 4632-4639, 2017 | 130 | 2017 |
| Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists E Pargon, K Menguelti, M Martin, A Bazin, O Chaix-Pluchery, C Sourd, ... Journal of applied physics 105 (9), 2009 | 94 | 2009 |
| Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001) T Zhou, M Tang, G Xiang, B Xiang, S Hark, M Martin, T Baron, S Pan, ... Nature communications 11 (1), 977, 2020 | 88 | 2020 |
| Surface roughness generated by plasma etching processes of silicon M Martin, G Cunge Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 70 | 2008 |
| Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon Z Liu, C Hantschmann, M Tang, Y Lu, JS Park, M Liao, S Pan, A Sanchez, ... Journal of Lightwave Technology 38 (2), 240-248, 2019 | 67 | 2019 |
| Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si (100) 300 mm wafers for next generation non planar devices R Cipro, T Baron, M Martin, J Moeyaert, S David, V Gorbenko, F Bassani, ... Applied Physics Letters 104 (26), 2014 | 62 | 2014 |
| Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001) M Martin, D Caliste, R Cipro, R Alcotte, J Moeyaert, S David, F Bassani, ... Applied Physics Letters 109 (25), 2016 | 57 | 2016 |
| Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light E Pargon, M Martin, K Menguelti, L Azarnouche, J Foucher, O Joubert Applied Physics Letters 94 (10), 2009 | 55 | 2009 |
| Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera MP Vigouroux, V Delaye, N Bernier, R Cipro, D Lafond, G Audoit, T Baron, ... Applied Physics Letters 105 (19), 2014 | 50 | 2014 |
| Evolution of bulk c-Si properties during the processing of GaP/c-Si heterojunction cell R Varache, M Darnon, M Descazeaux, M Martin, T Baron, D Muñoz Energy Procedia 77, 493-499, 2015 | 48 | 2015 |
| Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors E Pargon, M Martin, J Thiault, O Joubert, J Foucher, T Lill Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 48 | 2008 |
| Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates T Zhou, M Tang, G Xiang, X Fang, X Liu, B Xiang, S Hark, M Martin, ... Optica 6 (4), 430-435, 2019 | 46 | 2019 |
| O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate K Li, Z Liu, M Tang, M Liao, D Kim, H Deng, AM Sanchez, R Beanland, ... Journal of Crystal Growth 511, 56-60, 2019 | 38 | 2019 |
| Monolithically integrated electrically pumped continuous-wave III-V quantum dot light sources on silicon M Liao, S Chen, S Huo, S Chen, J Wu, M Tang, K Kennedy, W Li, S Kumar, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-10, 2017 | 38 | 2017 |
| Silicon carbide nanotubes growth: an original approach L Latu-Romain, M Ollivier, V Thiney, O Chaix-Pluchery, M Martin Journal of Physics D: Applied Physics 46 (9), 092001, 2013 | 33 | 2013 |
| Si–SiC core–shell nanowires M Ollivier, L Latu-Romain, M Martin, S David, A Mantoux, E Bano, ... Journal of Crystal Growth 363, 158-163, 2013 | 33 | 2013 |
| High photocarrier mobility in ultrafast ion-irradiated In0. 53Ga0. 47As for terahertz applications JC Delagnes, P Mounaix, H Němec, L Fekete, F Kadlec, P Kužel, M Martin, ... Journal of Physics D: Applied Physics 42 (19), 195103, 2009 | 33 | 2009 |
| Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates Y Bogumilowicz, JM Hartmann, R Cipro, R Alcotte, M Martin, F Bassani, ... Applied Physics Letters 107 (21), 2015 | 31 | 2015 |
| SOI-type bonded structures for advanced technology nodes J Widiez, JM Hartmann, F Mazen, S Sollier, C Veytizou, Y Bogumilowicz, ... ECS Transactions 64 (5), 35, 2014 | 31 | 2014 |
