| Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ... Infrared Physics & Technology 95, 222-226, 2018 | 36 | 2018 |
| Passivation studies of GaSb-based superlattice structures E Papis-Polakowska, J Kaniewski, J Szade, W Rzodkiewicz, A Jasik, ... Thin Solid Films 567, 77-81, 2014 | 28 | 2014 |
| High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared R Müller, V Gramich, M Wauro, J Niemasz, L Kirste, V Daumer, ... Infrared Physics & Technology 96, 141-144, 2019 | 25 | 2019 |
| Noise-current correlations in InAs/GaSb Type-II superlattice midwavelength infrared detectors Ł Ciura, A Kolek, J Jureńczyk, K Czuba, A Jasik, I Sankowska, ... IEEE Transactions on Electron Devices 63 (12), 4907-4912, 2016 | 20 | 2016 |
| Electronic and optical properties of InAs/InAs0. 625Sb0. 375 superlattices and their application for far-infrared detectors G Hussain, G Cuono, R Islam, A Trajnerowicz, J Jureńczyk, C Autieri, ... Journal of Physics D: Applied Physics 55 (49), 495301, 2022 | 18 | 2022 |
| 1/f noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors Ł Ciura, A Kolek, J Jureńczyk, K Czuba, A Jasik, I Sankowska, ... Optical and Quantum Electronics 50, 1-11, 2018 | 14 | 2018 |
| Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes K Czuba, I Sankowska, J Jureńczyk, A Jasik, E Papis-Polakowska, ... Semiconductor Science and Technology 32 (5), 055010, 2017 | 11 | 2017 |
| Electrical and optical performance of midwave infrared InAsSb heterostructure detectors E Gomółka, M Kopytko, O Markowska, K Michalczewski, Ł Kubiszyn, ... Optical Engineering 57 (2), 027107-027107, 2018 | 9 | 2018 |
| A study of InGaAs/InAlAs/InP avalanche photodiode K Czuba, J Jurenczyk, J Kaniewski Solid-State Electronics 104, 109-115, 2015 | 9 | 2015 |
| Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol E Papis-Polakowska, J Kaniewski, J Jurenczyk, A Jasik, K Czuba, ... Aip Advances 6 (5), 2016 | 6 | 2016 |
| The dependence of InAs/InAsSb superlattice detectors’ spectral response on molecular beam epitaxy growth temperature K Michalczewski, J Jureńczyk, Ł Kubiszyn, P Martyniuk Applied Sciences 12 (3), 1368, 2022 | 4 | 2022 |
| High operating temperature LWIR and VLWIR InAs1− xSbx optically immersed photodetectors grown on GaAs substrates K Michalczewski, D Benyahia, J Jureńczyk, D Stępień, A Kębłowski, ... Infrared Physics & Technology 97, 116-122, 2019 | 4 | 2019 |
| Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature R Müller, J Niemasz, V Daumer, A Janaszek, J Jureńczyk, R Rehm Optical Components and Materials XVI 10914, 212-219, 2019 | 4 | 2019 |
| Noise and detectivity of InAs/GaSb T2SL 4.5 um IR detectors A Kolek, Ł Ciura, K Czuba, A Jasik, J Jureńczyk, I Sankowska, ... Infrared Sensors, Devices, and Applications VII 10404, 1040402, 2017 | 4 | 2017 |
| Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes J Jurenczyk, D Zak, J Kaniewski Optica Applicata 43 (1), 39--46, 2013 | 4 | 2013 |
| Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber J Kaniewski, J Jurenczyk, D Zak, J Muszalski 18th Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of …, 2012 | 3 | 2012 |
| Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR W Gawron, Ł Kubiszyn, K Michalczewski, J Jureńczyk, J Piotrowski, ... Journal of Electronic Materials 52 (11), 7068-7073, 2023 | 2 | 2023 |
| Comprehensive analysis of new near-infrared avalanche photodiode structure K Czuba, J Jurenczyk, J Kaniewski Journal of Applied Remote Sensing 8 (1), 084999-084999, 2014 | 2 | 2014 |
| Commercialization readiness of HOT LWIR detectors based on InAs/InAs1-xSbx T2SL at VIGO System SA J Jureńczyk, Ł Kubiszyn, K Michalczewski, J Piotrowski Physics and Simulation of Optoelectronic Devices XXIX 11680, 202-210, 2021 | 1 | 2021 |
| Tunnel junction technology for multijunction solar cell applications B Ściana, I Zborowska-Lindert, D Radziewicz, D Pucicki, M Panek, ... The Ninth International Conference on Advanced Semiconductor Devices and …, 2012 | 1 | 2012 |
