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Ning Yang
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High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
J Wu, HY Chen, N Yang, J Cao, X Yan, F Liu, Q Sun, X Ling, J Guo, ...
Nature Electronics 3 (8), 466-472, 2020
1792020
Data retention and low voltage operation of Al2O3/Hf0. 5Zr0. 5O2 based ferroelectric tunnel junctions
A Shekhawat, G Walters, N Yang, J Guo, T Nishida, S Moghaddam
Nanotechnology 31 (39), 39LT01, 2020
412020
Circuit‐level memory technologies and applications based on 2D materials
J Ma, H Liu, N Yang, J Zou, S Lin, Y Zhang, X Zhang, J Guo, H Wang
Advanced Materials 34 (48), 2202371, 2022
252022
Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing
X Liu, A Islam, N Yang, B Odhner, MA Tupta, J Guo, PXL Feng
ACS nano 15 (12), 19733-19742, 2021
172021
Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor
MY Li, CH Hsu, SW Shen, AS Chou, YC Lin, CP Chuu, N Yang, SA Chou, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
142022
Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors
N Yang, YC Lin, CP Chuu, MS Rahman, T Wu, AS Chou, HY Chen, ...
IEEE Transactions on Electron Devices 70 (4), 2090-2097, 2023
92023
High-performance monolayer WSe2 p/n FETs via antimony-platinum modulated contact technology towards 2D CMOS electronics
AS Chou, YT Lin, YC Lin, CH Hsu, MY Li, SL Liew, SA Chou, HY Chen, ...
2022 International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2022
82022
Computational screening and multiscale simulation of barrier-free contacts for 2D semiconductor pFETs
N Yang, YC Lin, CP Chuu, S Rahman, T Wu, AS Chou, SL Liew, ...
2022 International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2022
72022
Multiscale simulation of ferroelectric tunnel junction memory enabled by van der Waals heterojunction: Comparison to experiment and performance projection
N Yang, HY Chen, J Wu, T Wu, J Cao, X Ling, H Wang, J Guo
2020 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2020
52020
A quantum-computing-based method for solving quantum confinement problem in semiconductor
N Yang, J Guo
IEEE Transactions on Electron Devices 70 (3), 1366-1373, 2023
22023
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study
N Yang, J Guo
Solid-State Electronics 213, 108859, 2024
2024
Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors
N Yang, TH Hsu, HY Chen, J Zhao, H Zhang, H Wang, J Guo
Journal of Electronic Materials, 1-12, 2024
2024
利用声光效应实现信息传输及再读取
杨宁, 韩兆坤, 田萌, 赵珂庆, 张增明, 陶小平
物理实验 37 (12), 38-40, 2017
2017
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