| Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V E Ko, JW Lee, C Shin IEEE Electron Device Letters 38 (4), 418-421, 2017 | 125 | 2017 |
| Vertical tunnel FET: Design optimization with triple metal-gate layers E Ko, H Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (12), 5030-5035, 2016 | 106 | 2016 |
| Sub-60-mV/decade negative capacitance FinFET with sub-10-nm hafnium-based ferroelectric capacitor E Ko, H Lee, Y Goh, S Jeon, C Shin IEEE Journal of the Electron Devices Society 5 (5), 306-309, 2017 | 76 | 2017 |
| Steep switching devices for low power applications: Negative differential capacitance/resistance field effect transistors E Ko, J Shin, C Shin Nano Convergence 5, 1-9, 2018 | 72 | 2018 |
| Steep slope silicon-on-insulator feedback field-effect transistor: Design and performance analysis C Lee, E Ko, C Shin IEEE Transactions on Electron Devices 66 (1), 286-291, 2018 | 43 | 2018 |
| HectoSTAR μLED Optoelectrodes for Large‐Scale, High‐Precision In Vivo Opto‐Electrophysiology M Vöröslakos, K Kim, N Slager, E Ko, S Oh, SS Parizi, B Hendrix, ... Advanced Science 9 (18), 2105414, 2022 | 30 | 2022 |
| Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector J Shin, E Ko, C Shin IEEE Transactions on Electron Devices 65 (1), 19-22, 2017 | 13 | 2017 |
| Optimization of double metal-gate InAs/Si heterojunction nanowire TFET Y Choi, Y Hong, E Ko, C Shin Semiconductor Science and Technology 35 (7), 075024, 2020 | 12 | 2020 |
| HectoSTAR microLED optoelectrodes for large-scale, high-precision in invo opto-electrophysiology K Kim, M Vöröslakos, A Fernández-Ruiz, SS Parizi, E Ko, B Hendrix, ... bioRxiv, 2020.10. 09.334227, 2020 | 9 | 2020 |
| Super steep-switching (SS≈ 2 mV/decade) phase-FinFET with Pb (Zr0. 52Ti0. 48) O3 threshold switching device J Shin, E Ko, J Park, SG Kim, JW Lee, HY Yu, C Shin Applied Physics Letters 113 (10), 2018 | 8 | 2018 |
| flexLiTE: Flexible micro-LED integrated optoelectrodes for minimally-invasive chronic deep-brain study E Ko, M Vöröslakos, G Buzsáki, E Yoon bioRxiv 503006, 2022 | 7* | 2022 |
| Effective drive current in steep slope FinFET (vs. conventional FinFET) E Ko, C Shin Applied Physics Letters 111 (15), 2017 | 5 | 2017 |
| Negative capacitance FinFET device and manufacturing method of the same CH Shin, EA Ko US Patent 9,831,239, 2017 | 4 | 2017 |
| A compact, ultrahigh-density headstage with high-fidelity hybrid integration for large-scale deep-brain opto-electrophysiology S Oh, K Kim, JR Lopez Ruiz, N Slager, E Ko, M Vöröslakos, V Lanzio, ... bioRxiv, 2023.10. 02.560174, 2023 | 2 | 2023 |
| flexLiTE: flexible micro-LED integrated optoelectrodes for minimally-invasive chronic deep-brain study E Ko, M Vöröslakos, G Buzsáki, E Yoon bioRxiv, 2022 | 2* | 2022 |
| HectoSTAR μLED Optoelectrodes for Large‐Scale, High‐Precision In Vivo Opto‐Electrophysiology (Adv. Sci. 18/2022) M Vöröslakos, K Kim, N Slager, E Ko, S Oh, SS Parizi, B Hendrix, ... Advanced Science 9 (18), 2022 | 2 | 2022 |
| Negative capacitance FinFET device and manufacturing method of the same CH Shin, EA Ko US Patent App. 16/431,798, 2022 | 1 | 2022 |
| Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis E Ko, J Shin, C Shin Journal of Nanoscience and Nanotechnology 19 (10), 6128-6130, 2019 | 1 | 2019 |
| Self-Assembled Origami Neural Probes for Scalable, Multifunctional, Three-Dimensional Neural Interface D Yan, JRL Ruiz, ML Hsieh, D Jeong, M Voroslakos, V Lanzio, EV Warner, ... bioRxiv, 2024.04. 25.591141, 2024 | | 2024 |
| Negative capacitance fet device with reduced hysteresis window CH Shin, EA Ko US Patent App. 17/672,019, 2023 | | 2023 |
Changhwan ShinProfessor at Korea UniversityVerified email at korea.ac.kr
