Layout design correlated with self-heating effect in stacked nanosheet transistors L Cai, W Chen, G Du, X Zhang, X Liu IEEE Transactions on Electron Devices 65 (6), 2647-2653, 2018 | 88 | 2018 |
A physics-based thermal model of nanosheet MOSFETs for device-circuit co-design L Cai, W Chen, P Chang, G Du, X Zhang, J Kang, X Liu 2018 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2018 | 21 | 2018 |
Investigation of self-heating effect on stacked nanosheet GAA transistors L Cai, W Chen, G Du, J Kang, X Zhang, X Liu 2018 International Symposium on VLSI Technology, Systems and Application …, 2018 | 20 | 2018 |
Analytical multistage thermal model for FEOL reliability considering self-and mutual-heating W Chen, L Cai, K Zhao, X Zhang, X Liu, G Du IEEE Transactions on Electron Devices 65 (9), 3633-3639, 2018 | 19 | 2018 |
Modeling of program Vth distribution for 3-D TLC NAND flash memory K Wang, G Du, Z Lun, W Chen, X Liu Science China Information Sciences 62, 1-10, 2019 | 16 | 2019 |
Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM L Cai, W Chen, Y Zhao, X Liu, J Kang, X Zhang, P Huang IEEE Transactions on Electron Devices 66 (9), 3822-3827, 2019 | 15 | 2019 |
Self-heating aware EM reliability prediction of advanced CMOS technology by kinetic Monte Carlo method L Cai, W Chen, P Huang, X Liu, Y Zhao, X Zhang Microelectronics Reliability 107, 113626, 2020 | 11 | 2020 |
Self-heating induced variability and reliability in nanosheet-FETs based SRAM W Chen, L Cai, K Wang, X Zhang, X Liu, G Du 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 10 | 2018 |
Analytical model for interface traps-dependent back bias capability and variability in ultrathin body and box fdsoi mosfets W Chen, L Cai, X Liu, G Du IEEE Transactions on Electron Devices 67 (11), 4573-4577, 2020 | 6 | 2020 |
Statistical simulation of self-heating induced variability and reliability with application to Nanosheet-FETs based SRAM W Chen, L Cai, K Wang, X Zhang, X Liu, G Du Microelectronics Reliability 98, 63-68, 2019 | 6 | 2019 |
Self-heating and thermal network model for complementary FET S Zhao, L Cai, W Chen, Y He, G Du IEEE Transactions on Electron Devices 69 (1), 11-16, 2021 | 5 | 2021 |
Photoelectric characteristic evaluation of different structured UTBB MOSFETs L Liu, W Chen, X Liu, G Du IEEE Transactions on Electron Devices 67 (5), 1919-1923, 2020 | 5 | 2020 |
A physics-based analytic model of analog switching resistive random access memory L Cai, W Chen, Y Zhao, X Liu, J Kang, X Zhang, P Huang IEEE Electron Device Letters 41 (2), 236-239, 2019 | 5 | 2019 |
3D kinetic Monte Carlo simulation of electromigration in multi-layer interconnects L Cai, W Chen, X Zhang, Y Zhao, X Liu 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 5 | 2019 |
Experiment characterization of front and back interfaces impact on back gate modulation in UTBB-FDSOI MOSFETs W Chen, L Cai, Y Cao, D Liao, M Tian, X Zhang, X Liu, G Du 2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019 | 5 | 2019 |
Investigation of PBTI Degradation in Nanosheet nFETs With HfO2 Gate Dielectric by 3D-KMC Method W Chen, L Cai, Y Li, K Wang, X Zhang, X Liu, G Du IEEE Transactions on Nanotechnology 18, 385-391, 2019 | 5 | 2019 |
Entire bias space statistical reliability simulation by 3D-KMC method and its application to the reliability assessment of nanosheet FETs based circuits W Chen, Y Li, L Cai, P Chang, G Du, X Liu 2018 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2018 | 4 | 2018 |
Thermal and Performance Analysis of Back-side Power Delivery Network beyond 3nm Technology Node H Zhang, L Cai, Y Chen, J Lin, W Chen 2023 Silicon Nanoelectronics Workshop (SNW), 29-30, 2023 | 3 | 2023 |
Machine learning-assisted device modeling with process variations for advanced technology Y Lyu, W Chen, M Zheng, B Yin, J Li, L Cai IEEE Journal of the Electron Devices Society 11, 303-310, 2023 | 3 | 2023 |
Determining the zero-temperature-coefficient point from device simulation to circuit for improving temperature variation immunity W Chen, M Zheng, Y Lyu, L Cai IEEE Transactions on Electron Devices 70 (3), 864-870, 2023 | 3 | 2023 |