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Wangyong Chen
Wangyong Chen
Sun Yat-set University
Verified email at mail.sysu.edu.cn
Title
Cited by
Cited by
Year
Layout design correlated with self-heating effect in stacked nanosheet transistors
L Cai, W Chen, G Du, X Zhang, X Liu
IEEE Transactions on Electron Devices 65 (6), 2647-2653, 2018
882018
A physics-based thermal model of nanosheet MOSFETs for device-circuit co-design
L Cai, W Chen, P Chang, G Du, X Zhang, J Kang, X Liu
2018 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2018
212018
Investigation of self-heating effect on stacked nanosheet GAA transistors
L Cai, W Chen, G Du, J Kang, X Zhang, X Liu
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
202018
Analytical multistage thermal model for FEOL reliability considering self-and mutual-heating
W Chen, L Cai, K Zhao, X Zhang, X Liu, G Du
IEEE Transactions on Electron Devices 65 (9), 3633-3639, 2018
192018
Modeling of program Vth distribution for 3-D TLC NAND flash memory
K Wang, G Du, Z Lun, W Chen, X Liu
Science China Information Sciences 62, 1-10, 2019
162019
Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM
L Cai, W Chen, Y Zhao, X Liu, J Kang, X Zhang, P Huang
IEEE Transactions on Electron Devices 66 (9), 3822-3827, 2019
152019
Self-heating aware EM reliability prediction of advanced CMOS technology by kinetic Monte Carlo method
L Cai, W Chen, P Huang, X Liu, Y Zhao, X Zhang
Microelectronics Reliability 107, 113626, 2020
112020
Self-heating induced variability and reliability in nanosheet-FETs based SRAM
W Chen, L Cai, K Wang, X Zhang, X Liu, G Du
2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018
102018
Analytical model for interface traps-dependent back bias capability and variability in ultrathin body and box fdsoi mosfets
W Chen, L Cai, X Liu, G Du
IEEE Transactions on Electron Devices 67 (11), 4573-4577, 2020
62020
Statistical simulation of self-heating induced variability and reliability with application to Nanosheet-FETs based SRAM
W Chen, L Cai, K Wang, X Zhang, X Liu, G Du
Microelectronics Reliability 98, 63-68, 2019
62019
Self-heating and thermal network model for complementary FET
S Zhao, L Cai, W Chen, Y He, G Du
IEEE Transactions on Electron Devices 69 (1), 11-16, 2021
52021
Photoelectric characteristic evaluation of different structured UTBB MOSFETs
L Liu, W Chen, X Liu, G Du
IEEE Transactions on Electron Devices 67 (5), 1919-1923, 2020
52020
A physics-based analytic model of analog switching resistive random access memory
L Cai, W Chen, Y Zhao, X Liu, J Kang, X Zhang, P Huang
IEEE Electron Device Letters 41 (2), 236-239, 2019
52019
3D kinetic Monte Carlo simulation of electromigration in multi-layer interconnects
L Cai, W Chen, X Zhang, Y Zhao, X Liu
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
52019
Experiment characterization of front and back interfaces impact on back gate modulation in UTBB-FDSOI MOSFETs
W Chen, L Cai, Y Cao, D Liao, M Tian, X Zhang, X Liu, G Du
2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019
52019
Investigation of PBTI Degradation in Nanosheet nFETs With HfO2 Gate Dielectric by 3D-KMC Method
W Chen, L Cai, Y Li, K Wang, X Zhang, X Liu, G Du
IEEE Transactions on Nanotechnology 18, 385-391, 2019
52019
Entire bias space statistical reliability simulation by 3D-KMC method and its application to the reliability assessment of nanosheet FETs based circuits
W Chen, Y Li, L Cai, P Chang, G Du, X Liu
2018 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2018
42018
Thermal and Performance Analysis of Back-side Power Delivery Network beyond 3nm Technology Node
H Zhang, L Cai, Y Chen, J Lin, W Chen
2023 Silicon Nanoelectronics Workshop (SNW), 29-30, 2023
32023
Machine learning-assisted device modeling with process variations for advanced technology
Y Lyu, W Chen, M Zheng, B Yin, J Li, L Cai
IEEE Journal of the Electron Devices Society 11, 303-310, 2023
32023
Determining the zero-temperature-coefficient point from device simulation to circuit for improving temperature variation immunity
W Chen, M Zheng, Y Lyu, L Cai
IEEE Transactions on Electron Devices 70 (3), 864-870, 2023
32023
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