Single crystalline film of hexagonal boron nitride atomic monolayer by controlling nucleation seeds and domains Q Wu, JH Park, S Park, SJ Jung, H Suh, N Park, W Wongwiriyapan, S Lee, ... Scientific reports 5 (1), 16159, 2015 | 149 | 2015 |
In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition Q Wu, SK Jang, S Park, SJ Jung, H Suh, YH Lee, S Lee, YJ Song Nanoscale 7 (17), 7574-7579, 2015 | 62 | 2015 |
In situ chemical vapor deposition of graphene and hexagonal boron nitride heterostructures Q Wu, W Wongwiriyapan, JH Park, S Park, SJ Jung, T Jeong, S Lee, ... Current Applied Physics 16 (9), 1175-1191, 2016 | 60 | 2016 |
The environmental stability of large-size and single-crystalline antimony flakes grown by chemical vapor deposition on SiO 2 substrates Q Wu, YJ Song Chemical Communications 54 (69), 9671-9674, 2018 | 26 | 2018 |
Atomic and electronic structures of graphene-decorated graphitic carbon nitride (g-C3N4) as a metal-free photocatalyst under visible-light T Jeong, H Piao, S Park, JH Yang, G Choi, Q Wu, H Kang, HJ Woo, ... Applied Catalysis B: Environmental 256, 117850, 2019 | 25 | 2019 |
Space‐Confined One‐Step Growth of 2D MoO2/MoS2 Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline Electrolytes Q Wu, Y Luo, R Xie, H Nong, Z Cai, L Tang, J Tan, S Feng, S Zhao, Q Yu, ... Small 18 (32), 2201051, 2022 | 19 | 2022 |
In situ direct growth of graphene/hexagonal boron nitride heterostructure on SiO2 substrate without metal catalyst Q Wu, J Lee, J Sun, YJ Song Carbon 138, 76-80, 2018 | 18 | 2018 |
Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition Q Wu, SJ Jung, SK Jang, J Lee, I Jeon, H Suh, YH Kim, YH Lee, S Lee, ... Nanoscale 7 (23), 10357-10361, 2015 | 18 | 2015 |
Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector Z Xu, M He, Q Wu, C Wu, X Li, B Liu, MC Tang, J Yao, G Wei Advanced Science 10 (12), 2207743, 2023 | 16 | 2023 |
Resolidified Chalcogen Precursors for High‐Quality 2D Semiconductor Growth Q Wu, H Nong, R Zheng, R Zhang, J Wang, L Yang, B Liu Angewandte Chemie 135 (29), e202301501, 2023 | 9 | 2023 |
Two-dimensional semiconducting and single-crystalline antimony trioxide directly-grown on monolayer graphene Q Wu, T Jeong, S Park, J Sun, H Kang, T Yoon, YJ Song Chemical communications 55 (17), 2473-2476, 2019 | 9 | 2019 |
Synthesis of large area graphitic carbon nitride nanosheet by chemical vapor deposition Q Wu, T Jeong, SH Kim, YJ Song Journal of Alloys and Compounds 900, 163310, 2022 | 7 | 2022 |
Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure SUH Hwansoo, J Insu, MW Kim, YJ Song, M Wang, WU Qinke, S Lee, ... US Patent 9,368,177, 2016 | 6 | 2016 |
Iodine-assisted ultrafast growth of high-quality monolayer MoS2 with sulfur-terminated edges Q Wu, J Zhang, L Tang, U Khan, H Nong, S Zhao, Y Sun, R Zheng, ... National Science Open 2 (4), 20230009, 2023 | 4 | 2023 |
Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl H Nong, Q Wu, J Tan, Y Sun, R Zheng, R Zhang, S Zhao, B Liu Small 18 (14), 2107490, 2022 | 4 | 2022 |
Growth phase diagram of graphene grown through chemical vapor deposition on copper Q Wu, S Jeon, YJ Song Nano 15 (10), 2050137, 2020 | 4 | 2020 |
Direct tuning of graphene work function via chemical vapor deposition control T Yoon, Q Wu, DJ Yun, SH Kim, YJ Song Scientific Reports 10 (1), 9870, 2020 | 4 | 2020 |
Growth of 2D Cr2O3–CrN Mosaic Heterostructures with Tunable Room‐Temperature Ferromagnetism L He, H Nong, J Tan, Q Wu, R Zheng, S Zhao, Q Yu, J Wang, B Liu Advanced Materials 36 (7), 2304946, 2024 | 3 | 2024 |
The metal-catalyst-free and in-situ growth of gaphene and hBN heterostructure sample on dielectric substrates W QINKE, W WONGWIRIYAPAN, YJ SONG 한국진공학회 학술발표회초록집, 1116-1116, 2016 | 3* | 2016 |
Method of forming multilayer graphene structure SUH Hwansoo, J Insu, YJ Song, WU Qinke, S Jung US Patent 9,287,116, 2016 | 2 | 2016 |