Shinya AIKAWA
TitleCited byYear
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ...
ACS nano 8 (4), 3895-3903, 2014
1882014
Enhanced thermal conductivity of ethylene glycol with single-walled carbon nanotube inclusions
S Harish, K Ishikawa, E Einarsson, S Aikawa, S Chiashi, J Shiomi, ...
International Journal of heat and mass transfer 55 (13-14), 3885-3890, 2012
1092012
Self-limiting layer-by-layer oxidation of atomically thin WSe2
M Yamamoto, S Dutta, S Aikawa, S Nakaharai, K Wakabayashi, ...
Nano letters 15 (3), 2067-2073, 2015
1052015
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
S Aikawa, T Nabatame, K Tsukagoshi
Applied Physics Letters 103 (17), 172105, 2013
802013
Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ...
Applied Physics Letters 104 (10), 102103, 2014
692014
Diameter-controlled and nitrogen-doped vertically aligned single-walled carbon nanotubes
T Thurakitseree, C Kramberger, P Zhao, S Aikawa, S Harish, S Chiashi, ...
Carbon 50 (7), 2635-2640, 2012
662012
Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor
S Aikawa, P Darmawan, K Yanagisawa, T Nabatame, Y Abe, ...
Applied Physics Letters 102 (10), 102101, 2013
622013
Low-temperature processable amorphous In-WO thin-film transistors with high mobility and stability
T Kizu, S Aikawa, N Mitoma, M Shimizu, X Gao, MF Lin, T Nabatame, ...
Applied Physics Letters 104 (15), 152103, 2014
532014
Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusion
S Harish, K Ishikawa, E Einarsson, S Aikawa, T Inoue, P Zhao, ...
Materials Express 2 (3), 213-223, 2012
512012
Deformable transparent all-carbon-nanotube transistors
S Aikawa, E Einarsson, T Thurakitseree, S Chiashi, E Nishikawa, ...
Applied Physics Letters 100 (6), 063502, 2012
432012
Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si-and W-dopants
N Mitoma, S Aikawa, W Ou-Yang, X Gao, T Kizu, MF Lin, A Fujiwara, ...
Applied Physics Letters 106 (4), 042106, 2015
392015
Catalytic graphitization of an amorphous carbon film under focused electron beam irradiation due to the presence of sputtered nickel metal particles
S Aikawa, T Kizu, E Nishikawa
Carbon 48 (10), 2997-2999, 2010
262010
Effect of gas pressure on the density of horizontally aligned single-walled carbon nanotubes grown on quartz substrates
T Inoue, D Hasegawa, S Badar, S Aikawa, S Chiashi, S Maruyama
The Journal of Physical Chemistry C 117 (22), 11804-11810, 2013
252013
Diameter controlled chemical vapor deposition synthesis of single-walled carbon nanotubes
T Thurakitseree, E Einarsson, R Xiang, P Zhao, S Aikawa, S Chiashi, ...
Journal of nanoscience and nanotechnology 12 (1), 370-376, 2012
242012
Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
S Aikawa, N Mitoma, T Kizu, T Nabatame, K Tsukagoshi
Applied Physics Letters 106 (19), 192103, 2015
192015
Facile fabrication of all-SWNT field-effect transistors
S Aikawa, R Xiang, E Einarsson, S Chiashi, J Shiomi, E Nishikawa, ...
Nano Research 4 (6), 580-588, 2011
182011
Highly stable and tunable n-type graphene field-effect transistors with poly (vinyl alcohol) films
S Kim, P Zhao, S Aikawa, E Einarsson, S Chiashi, S Maruyama
ACS applied materials & interfaces 7 (18), 9702-9708, 2015
172015
Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors
X Gao, S Aikawa, N Mitoma, MF Lin, T Kizu, T Nabatame, K Tsukagoshi
Applied Physics Letters 105 (2), 023503, 2014
162014
Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
T Kizu, S Aikawa, T Nabatame, A Fujiwara, K Ito, M Takahashi, ...
Journal of Applied Physics 120 (4), 045702, 2016
122016
Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
MF Lin, X Gao, N Mitoma, T Kizu, W Ou-Yang, S Aikawa, T Nabatame, ...
AIP Advances 5 (1), 017116, 2015
112015
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Articles 1–20