| Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy L Li, D Pan, Y Xue, X Wang, M Lin, D Su, Q Zhang, X Yu, H So, D Wei, ... Nano letters 17 (2), 622-630, 2017 | 97 | 2017 |
| Anomalous pressure characteristics of defects in hexagonal boron nitride flakes Y Xue, H Wang, Q Tan, J Zhang, T Yu, K Ding, D Jiang, X Dou, J Shi, ... ACS nano 12 (7), 7127-7133, 2018 | 76 | 2018 |
| Single-photon emission from point defects in aluminum nitride films Y Xue, H Wang, N Xie, Q Yang, F Xu, B Shen, J Shi, D Jiang, X Dou, T Yu, ... The Journal of Physical Chemistry Letters 11 (7), 2689-2694, 2020 | 64 | 2020 |
| Donor–Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride Q Tan, JM Lai, XL Liu, D Guo, Y Xue, X Dou, BQ Sun, HX Deng, PH Tan, ... Nano Letters 22 (3), 1331-1337, 2022 | 41 | 2022 |
| Optical properties of Nd3+ ions doped GdTaO4 for pressure and temperature sensing P Zhou, Q Zhang, F Peng, B Sun, X Dou, B Liu, D Han, Y Xue, K Ding Journal of Rare Earths 40 (6), 870-877, 2022 | 19 | 2022 |
| Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films Y Xue, T Wei, H Chang, D Liang, X Dou, B Sun The Journal of Physical Chemistry C 125 (20), 11043–11047, 2021 | 19 | 2021 |
| 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K Y Xue, Z Chen, H Ni, Z Niu, D Jiang, X Dou, B Sun Applied Physics Letters 111 (18), 2017 | 10 | 2017 |
| Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm YZ Xue, ZS Chen, HQ Ni, ZC Niu, DS Jiang, XM Dou, BQ Sun Chinese physics B 26 (8), 084202, 2017 | 10 | 2017 |
| Ultraviolet to near-infrared single photon emitters in hBN QH Tan, KX Xu, XL Liu, D Guo, YZ Xue, SL Ren, YF Gao, XM Dou, ... arXiv preprint arXiv 1908, 06578, 2019 | 9 | 2019 |
| Photo-induced doping effect and dynamic process in monolayer MoSe2 Q Yang, Y Xue, H Chen, X Dou, B Sun Journal of Semiconductors 41 (8), 082004, 2020 | 6 | 2020 |
| Optical properties of atomic defects in hexagonal boron nitride flakes under high pressure XY Zhao, JH Huang, ZY Zhuo, YZ Xue, K Ding, XM Dou, J Liu, BQ Sun Chinese Physics Letters 37 (4), 044204, 2020 | 6 | 2020 |
| Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide Y Xue, M Titze, J Mack, Z Yang, L Zhang, SS Su, Z Zhang, L Fan Nano Letters 24 (7), 2369-2375, 2024 | 4 | 2024 |
| Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K QH Tan, JM Lai, XL Liu, YZ Xue, XM Dou, BQ Sun, WB Gao, PH Tan, ... arXiv preprint arXiv:1908.06578, 2019 | 2 | 2019 |
| Low-Dimensional Solid-State Single-Photon Emitters J Chen, C Cui, B Lawrie, Y Xue, S Guha, M Eichenfield, H Zhao, X Yan arXiv preprint arXiv:2410.22106, 2024 | | 2024 |
| Selective Generation of V2 Silicon-Vacancy Color Centers in Silicon Carbide Y Xue, L Fan, Z Zhang APS March Meeting Abstracts 2023, M39. 009, 2023 | | 2023 |
| Pressure characters of defects in hexagonal boron nitride flakes Y Xue, X Dou, B Sun 2019 Compound Semiconductor Week (CSW), 1-2, 2019 | | 2019 |
