| Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth M Abadier, H Song, TS Sudarshan, YN Picard, M Skowronski Journal of Crystal Growth 418, 7-14, 2015 | 18 | 2015 |
| Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy M Abadier, RL Myers-Ward, NA Mahadik, RE Stahlbush, VD Wheeler, ... Journal of Applied Physics 114 (12), 2013 | 15 | 2013 |
| Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition M Abadier, RA Berechman, PG Neudeck, AJ Trunek, M Skowronski Journal of crystal growth 347 (1), 45-48, 2012 | 5 | 2012 |
| Quantification of Milling Rate and Reduction in Amorphous Damage using Low Energy, Small Spot, Argon Ion Milling for TEM Specimens prepared by FIB. M Abadier, M Boccabella, J Liu, P Fischione Microscopy and Microanalysis 22 (S3), 194-195, 2016 | 1 | 2016 |
| Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers M Abadier, RL Myers-Ward, H Song, DK Gaskill, CR Eddy, TS Sudarshan, ... Microscopy and Microanalysis 20 (S3), 344-345, 2014 | | 2014 |
| Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate M Abadier, RL Myers-Ward, NA Mahadik, RE Stahlbush, VD Wheeler, ... ECS Meeting Abstracts, 1907, 2013 | | 2013 |
