| Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ... Small 15 (3), 1803684, 2019 | 20 | 2019 |
| Preferred growth direction of III–V nanowires on differently oriented Si substrates H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ... Nanotechnology 31 (47), 475708, 2020 | 10 | 2020 |
| Optimizing GaAs nanowire-based visible-light photodetectors X Li, X Yu, H Zeng, G Boras, K Shen, Y Zhang, J Wu, KL Choy, H Liu Applied Physics Letters 119 (5), 053105, 2021 | 8 | 2021 |
| Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates G Boras, X Yu, HA Fonseka, G Davis, AV Velichko, JA Gott, H Zeng, S Wu, ... The Journal of Physical Chemistry C, 2021 | 7 | 2021 |
| Hybrid III–V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores H Zeng, X Yu, HA Fonseka, JA Gott, M Tang, Y Zhang, G Boras, J Xu, ... Nano letters 18 (10), 6397-6403, 2018 | 6 | 2018 |
| Checked patterned elemental distribution in AlGaAs nanowire branches via vapor-liquid-solid growth G Boras, X Yu, HA Fonseka, D Zhang, H Zeng, A Sanchez, H Liu Nanoscale, 2020 | 1 | 2020 |
