| Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film S Huang, Q Jiang, S Yang, C Zhou, KJ Chen IEEE Electron Device Letters 33 (4), 516-518, 2012 | 283 | 2012 |
| 600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013 | 277 | 2013 |
| Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors S Huang, S Yang, J Roberts, KJ Chen Japanese journal of applied physics 50 (11R), 110202, 2011 | 230 | 2011 |
| Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices C Zhou, Q Jiang, S Huang, KJ Chen IEEE Electron Device Letters 33 (8), 1132-1134, 2012 | 218 | 2012 |
| High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497-1499, 2013 | 185 | 2013 |
| Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges S Huang, Q Jiang, S Yang, Z Tang, KJ Chen IEEE electron device letters 34 (2), 193-195, 2013 | 136 | 2013 |
| Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition L Lu, ZY Gao, B Shen, FJ Xu, S Huang, ZL Miao, Y Hao, ZJ Yang, ... Journal of Applied Physics 104 (12), 2008 | 130 | 2008 |
| High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ... Applied Physics Express 5 (1), 015502, 2012 | 115 | 2012 |
| High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen IEEE electron device letters 34 (3), 366-368, 2013 | 112 | 2013 |
| Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices S Huang, X Liu, X Wang, X Kang, J Zhang, J Fan, J Shi, K Wei, Y Zheng, ... IEEE Transactions on Electron Devices 65 (1), 207-214, 2017 | 99 | 2017 |
| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE Transactions on Electron Devices 63 (2), 614-619, 2016 | 94 | 2016 |
| Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ... 2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011 | 93 | 2011 |
| Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen 2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013 | 90 | 2013 |
| High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of Merit Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang IEEE Transactions on Electron Devices 62 (3), 776-781, 2015 | 84 | 2015 |
| High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ... IEEE Electron Device Letters 37 (12), 1617-1620, 2016 | 80 | 2016 |
| Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNxLayer X Wang, S Huang, Y Zheng, K Wei, X Chen, G Liu, T Yuan, W Luo, L Pang, ... IEEE Electron Device Letters 36 (7), 666-668, 2015 | 76 | 2015 |
| Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer X Wang, S Huang, Y Zheng, K Wei, X Chen, H Zhang, X Liu IEEE Transactions on electron devices 61 (5), 1341-1346, 2014 | 74 | 2014 |
| A 5.8-GHz high-power and high-efficiency rectifier circuit with lateral GaN Schottky diode for wireless power transfer K Dang, J Zhang, H Zhou, S Huang, T Zhang, Z Bian, Y Zhang, X Wang, ... IEEE Transactions on Power Electronics 35 (3), 2247-2252, 2019 | 69 | 2019 |
| O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ... Applied Physics Letters 106 (3), 2015 | 69 | 2015 |
| Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014 | 63 | 2014 |
Shu YangUniversity of Science and Technology of China; HKUST; University of Cambridge在 ustc.edu.cn 的电子邮件经过验证
