Sen Huang
Title
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Year
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
1872012
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors
S Huang, S Yang, J Roberts, KJ Chen
Japanese journal of applied physics 50 (11R), 110202, 2011
1842011
600-V Normally Off/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
1812013
Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices
C Zhou, Q Jiang, S Huang, KJ Chen
IEEE electron device letters 33 (8), 1132-1134, 2012
1442012
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation
S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
1282013
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ...
Applied physics express 5 (1), 015502, 2012
932012
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges
S Huang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE electron device letters 34 (2), 193-195, 2013
922013
Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition
L Lu, ZY Gao, B Shen, FJ Xu, S Huang, ZL Miao, Y Hao, ZJ Yang, ...
Journal of Applied Physics 104 (12), 123525, 2008
882008
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNxPassivation
Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen
IEEE electron device letters 34 (3), 366-368, 2013
782013
Assessment of heart rate, acidosis, consciousness, oxygenation, and respiratory rate to predict noninvasive ventilation failure in hypoxemic patients
J Duan, X Han, L Bai, L Zhou, S Huang
Intensive care medicine 43 (2), 192-199, 2017
632017
Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology
KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ...
2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011
572011
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013
552013
Optical and electrical properties of films grown on Si substrates by reactive radio-frequency magnetron sputtering
CW Sun, P Xin, CY Ma, ZW Liu, QY Zhang, YQ Wang, ZJ Yin, S Huang, ...
Applied physics letters 89 (18), 181923, 2006
542006
Current transport mechanism of Schottky diodes at high temperatures
S Huang, B Shen, MJ Wang, FJ Xu, Y Wang, HY Yang, F Lin, L Lu, ...
Applied Physics Letters 91 (7), 072109, 2007
522007
High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of Merit
Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang
IEEE Transactions on Electron Devices 62 (3), 776-781, 2015
502015
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess
Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
492016
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 033507, 2015
492015
Fabrication and Characterization of Enhancement-Mode High--AlGaN/GaN MIS-HEMTs
S Yang, S Huang, M Schnee, QT Zhao, J Schubert, KJ Chen
IEEE transactions on electron devices 60 (10), 3040-3046, 2013
472013
AlGaN/GaN MISHEMTs With High-Gate Dielectric
S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ...
IEEE Electron Device Letters 33 (7), 979-981, 2012
412012
High- High Johnson's Figure-of-Merit 0.2- Gate AlGaN/GaN HEMTs on Silicon Substrate With Passivation
S Huang, K Wei, G Liu, Y Zheng, X Wang, L Pang, X Kong, X Liu, Z Tang, ...
IEEE Electron Device Letters 35 (3), 315-317, 2014
382014
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