| Effective leakage current reduction in GaN ultraviolet avalanche photodiodes with an ion-implantation isolation method M Cho, Z Xu, M Bakhtiary-Noodeh, H Jeong, CW Tsou, T Detchprohm, ... IEEE Transactions on Electron Devices 68 (6), 2759-2763, 2021 | 16 | 2021 |
| Design of ion-implanted junction termination extension for vertical GaN pin rectifiers M Cho, Z Xu, M Bakhtiary-Noodeh, T Detchphrom, RD Dupuis, SC Shen ECS Transactions 98 (6), 49, 2020 | 11 | 2020 |
| Extended electrical and photonic characterization of GaN-based ultra-violet microLEDs with an ITO emission window layer YL Tsai, SK Huang, HH Huang, SM Yang, KL Liang, WH Kuo, YH Fang, ... IEEE Photonics Journal 12 (6), 1-9, 2020 | 7 | 2020 |
| Breakdown characteristics of deep-ultraviolet Al0. 6Ga0. 4N pin avalanche photodiodes H Jeong, M Cho, Z Xu, F Mehnke, M Bakhtiary-Noodeh, T Detchprohm, ... Journal of Applied Physics 131 (10), 2022 | 5 | 2022 |
| Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness F Mehnke, AM Fischer, Z Xu, H Bouchard, T Detchprohm, SC Shen, ... Journal of Applied Physics 131 (7), 2022 | 5 | 2022 |
| 1.2-kV vertical GaN PIN rectifier with ion-implanted floating guard rings M Cho, Z Xu, M Bakhtiary-Noodeh, T Detchprohm, MA Daeumer, JH Yoo, ... IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness Y Ando, F Mehnke, H Bouchard, Z Xu, AM Fischer, SC Shen, FA Ponce, ... Journal of Crystal Growth 607, 127100, 2023 | 3 | 2023 |
| High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation M Bakhtiary-Noodeh, M Cho, H Jeong, Z Xu, CW Tsou, C Cao, SC Shen, ... Journal of Electronic Materials 50 (8), 4462-4468, 2021 | 3 | 2021 |
| Demonstration of uniform 6x6 GaN pin UV avalanche photodiode arrays M Bakhtiary-Noodeh, M Cho, Z Xu, H Jeong, AN Otte, SC Shen, ... Gallium Nitride Materials and Devices XVI 11686, 93-100, 2021 | 3 | 2021 |
| Ion-implanted Al0. 6Ga0. 4N deep-ultraviolet avalanche photodiodes H Jeong, M Cho, Z Xu, F Mehnke, N Otte, SC Shen, T Detchprohm, ... Applied Physics Letters 123 (12), 2023 | 1 | 2023 |
| Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping Z Xu, MA Daeumer, M Cho, JH Yoo, T Detchprohm, M Bakhtiary-Noodeh, ... Journal of Applied Physics 135 (20), 2024 | | 2024 |
| Low Leakage and High Gain GaN pin Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window Z Xu, T Detchprohm, SC Shen, AN Otte, RD Dupuis IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes Y Ando, Z Xu, T Detchprohm, P Young, RD Dupuis Applied Physics Letters 123 (13), 2023 | | 2023 |
| Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for UV LEDs and Laser Diodes Y Ando, Z Xu, T Detchprohm, RD Dupuis CLEO: Applications and Technology, ATu3H. 2, 2023 | | 2023 |
| Al0. 6Ga0. 4N pin deep-ultraviolet avalanche photodiodes RD Dupuis, H Jeong, M Cho, Z Xu, SC Shen, T Detchprohm, AN Otte Gallium Nitride Materials and Devices XVII, PC120010P, 2022 | | 2022 |
| High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach RD Dupuis, F Mehnke, AM Fischer, Z Xu, HK Bouchard, T Detchprohm, ... SPIE OPTO 12001, 2022 | | 2022 |
| Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown M Cho, Q Shao, TA Laurence, MA Daeumer, JH Yoo, MB Noodeh, Z Xu, ... CS MANTECH, 2022 | | 2022 |
| High-Performance GaN-Based Ultraviolet Photon Detection Technology RD Dupuis, SC Shen, T Detchprohm, M Cho, M Bakhtiary-Noodeh, ... 2021 IEEE Research and Applications of Photonics in Defense Conference …, 2021 | | 2021 |
| Development of (In) AlGaN-based UV laser diodes emitting at 369 nm F Mehnke, Z Xu, T Detchprohm, M Cho, SC Shen, RD Dupuis GaN 3, 2, 2021 | | 2021 |
| A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers M Cho, MA Daeumer, JH Yoo, M Bakhtiary-Noodeh, Q Shao, Z Xu, ... | | |
