| High-quality sandwiched black phosphorus heterostructure and its quantum oscillations X Chen, Y Wu, Z Wu, Y Han, S Xu, L Wang, W Ye, T Han, Y He, Y Cai, ... Nature communications 6 (1), 7315, 2015 | 536 | 2015 |
| Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ... Nano Letters 16 (12), 7768-7773, 2016 | 297 | 2016 |
| Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures X Chen, Z Wu, S Xu, L Wang, R Huang, Y Han, W Ye, W Xiong, T Han, ... Nature communications 6 (1), 6088, 2015 | 223 | 2015 |
| Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ... 2D Materials 3 (2), 021007, 2016 | 128 | 2016 |
| Isolation and characterization of few-layer manganese thiophosphite G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ... ACS nano 11 (11), 11330-11336, 2017 | 113 | 2017 |
| Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ... Nature communications 7 (1), 12955, 2016 | 109 | 2016 |
| Intrinsic valley Hall transport in atomically thin MoS2 Z Wu, BT Zhou, X Cai, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ... Nature communications 10 (1), 611, 2019 | 99 | 2019 |
| van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ... Nano letters 15 (4), 2645-2651, 2015 | 69 | 2015 |
| Odd-Integer Quantum Hall States and Giant Spin Susceptibility in -Type Few-Layer S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ... Physical review letters 118 (6), 067702, 2017 | 59 | 2017 |
| Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2 J Lin, T Han, BA Piot, Z Wu, S Xu, G Long, L An, P Cheung, PP Zheng, ... Nano letters 19 (3), 1736-1742, 2019 | 43 | 2019 |
| Spectroscopy signatures of electron correlations in a trilayer graphene/hBN moiré superlattice J Yang*, G Chen*, T Han*, Q Zhang, YH Zhang, L Jiang, B Lyu, H Li, ... Science 375 (6586), 1295-1299, 2022 | 37 | 2022 |
| Nodal and Nematic Superconducting Phases in Monolayers from Competing Superconducting Channels C Cho, J Lyu, L An, T Han, KT Lo, CY Ng, J Hu, Y Gao, G Li, M Huang, ... Physical Review Letters 129 (8), 087002, 2022 | 31* | 2022 |
| Bridging the gap between atomically thin semiconductors and metal leads X Cai, Z Wu, X Han, Y Chen, S Xu, J Lin, T Han, P He, X Feng, L An, R Shi, ... Nature Communications 13 (1), 1777, 2022 | 31 | 2022 |
| Detection of interlayer interaction in few-layer graphene Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ... Physical Review B 92 (7), 075408, 2015 | 29 | 2015 |
| Ambipolar quantum transport in few-layer black phosphorus G Long, D Maryenko, S Pezzini, S Xu, Z Wu, T Han, J Lin, C Cheng, Y Cai, ... Physical Review B 96 (15), 155448, 2017 | 27 | 2017 |
| A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ... Nanoscale 8 (5), 2594-2600, 2016 | 23 | 2016 |
| Probing Defect‐Induced Midgap States in MoS2 Through Graphene–MoS2 Heterostructures Y Han, Z Wu, S Xu, X Chen, L Wang, Y Wang, W Xiong, T Han, W Ye, ... Advanced Materials Interfaces 2 (8), 1500064, 2015 | 23 | 2015 |
| Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene T Han, Z Lu, G Scuri, J Sung, J Wang, T Han, K Watanabe, T Taniguchi, ... arXiv preprint arXiv:2305.03151, 2023 | 22 | 2023 |
| Orbital multiferroicity in pentalayer rhombohedral graphene T Han, Z Lu, G Scuri, J Sung, J Wang, T Han, K Watanabe, T Taniguchi, ... Nature, 1-7, 2023 | 21 | 2023 |
| Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport G Long, S Xu, J Shen, J Hou, Z Wu, T Han, J Lin, WK Wong, Y Cai, R Lortz, ... 2D Materials 3 (3), 031001, 2016 | 19 | 2016 |
