| Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ... IEEE Sensors Journal 3 (6), 788-795, 2003 | 131 | 2003 |
| Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates I Ahmad, M Holtz, NN Faleev, H Temkin Journal of applied physics 95 (4), 1692-1697, 2004 | 129 | 2004 |
| Self-heating study of an AlGaN∕ GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ... Applied Physics Letters 86 (17), 2005 | 100 | 2005 |
| Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition G Kipshidze, B Yavich, A Chandolu, J Yun, V Kuryatkov, I Ahmad, ... Applied Physics Letters 86 (3), 2005 | 93 | 2005 |
| 276 nm substrate-free flip-chip AlGaN light-emitting diodes S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ... Applied physics express 4 (3), 032102, 2011 | 65 | 2011 |
| Deep ultraviolet light emitting diodes based on short period superlattices of AlN/AlGa (In) N SA Nikishin, VV Kuryatkov, A Chandolu, BA Borisov, GD Kipshidze, ... Japanese journal of applied physics 42 (11B), L1362, 2003 | 64 | 2003 |
| Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations I Ahmad, V Kasisomayajula, DY Song, L Tian, JM Berg, M Holtz Journal of applied physics 100 (11), 2006 | 43 | 2006 |
| Depth dependence of defect density and stress in GaN grown on SiC N Faleev, H Temkin, I Ahmad, M Holtz, Y Melnik Journal of applied physics 98 (12), 2005 | 42 | 2005 |
| Optical properties of a nanoporous array in silicon L Tian, KB Ram, I Ahmad, L Menon, M Holtz Journal of applied physics 97 (2), 2005 | 41 | 2005 |
| MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters K Balakrishnan, M Lachab, HC Chen, D Blom, V Adivarahan, I Ahmad, ... physica status solidi (a) 208 (12), 2724-2729, 2011 | 28 | 2011 |
| Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes M Lachab, F Asif, B Zhang, I Ahmad, A Heidari, Q Fareed, V Adivarahan, ... Solid-state electronics 89, 156-160, 2013 | 26 | 2013 |
| Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates F Asif, M Lachab, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan Journal of Vacuum Science & Technology B 32 (6), 2014 | 18 | 2014 |
| Substrate lifted-off AlGaN/AlGaN lateral conduction thin-film light-emitting diodes operating at 285 nm F Asif, HC Chen, A Coleman, M Lachab, I Ahmad, B Zhang, Q Fareed, ... Japanese Journal of Applied Physics 52 (8S), 08JG14, 2013 | 18 | 2013 |
| Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ... Semiconductor Science and Technology 34 (12), 125001, 2019 | 14 | 2019 |
| Optically-pumped 285 nm edge stimulated emission from AlGaN-based LED structures grown by MOCVD on sapphire substrates M Lachab, F Asif, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan Japanese Journal of Applied Physics 53 (11), 112101, 2014 | 14 | 2014 |
| A study of anti-commutativity in AG-groupoids I Ahmad, I Ahmad, M Rashad Punjab University Journal of Mathematics 48 (1), 2020 | 13 | 2020 |
| Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate S Hasan, A Mamun, K Hussain, M Gaevski, I Ahmad, A Khan Journal of Materials Research 36, 4360-4369, 2021 | 12 | 2021 |
| Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes I Ahmad, B Krishnan, B Zhang, Q Fareed, M Lachab, J Dion, A Khan physica status solidi (a) 208 (7), 1501-1503, 2011 | 11 | 2011 |
| High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 10 | 2020 |
| High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 10 | 2020 |
