| Memristor-based neural networks: a bridge from device to artificial intelligence Z Cao, B Sun, G Zhou, SS Mao, SH Zhu, J Zhang, C Ke, Y Zhao, J Shao Nanoscale Horizons, 2023 | 31 | 2023 |
| Characteristic analysis and circuit implementation of a novel fractional-order memristor-based clamping voltage drift H Tian, J Liu, Z Wang, F Xie, Z Cao Fractal and Fractional 7 (1), 2, 2022 | 26 | 2022 |
| Dynamical analysis and fixed-time synchronization of a chaotic system with hidden attractor and a line equilibrium H Tian, Z Wang, H Zhang, Z Cao, P Zhang The European Physical Journal Special Topics 231 (11), 2455-2466, 2022 | 14 | 2022 |
| Effect of tungsten on the vacancy behaviors in Ta–W alloys from first-principles calculations Y Lv, K Hu, Z Huang, Z Cao, S Wen, Y Zhao, M Pan, H Deng Solid State Communications 306, 113767, 2020 | 12 | 2020 |
| Effect of transmutation elements Re and Ta on the vacancy formation and dissociation behaviors in W bulk S Wen, K Hu, M Pan, Z Huang, Z Cao, Y Lv, Y Zhao, H Deng Computational Materials Science 179, 109624, 2020 | 10 | 2020 |
| Memristor‐Based Neuromorphic Chips X Duan, Z Cao, K Gao, W Yan, S Sun, G Zhou, Z Wu, F Ren, B Sun Advanced materials, 2310704, 2024 | 7 | 2024 |
| A magnetic field controlled memristor towards the design of an implantable detector S Mao, B Sun, G Zhou, J Qin, Y Yang, Z Rao, M Liu, C Ke, Y Zhao Journal of Colloid and Interface Science 643, 38-46, 2023 | 6 | 2023 |
| Phase transformation and mechanical stability of niobium aluminide (Nb3Al) induced by high pressures Z Cao, K Hu, M Pan, Z Huang, W Hu, H Wu, L Pan, L Han, J Wang, ... Journal of Alloys and Compounds 869, 159278, 2021 | 6 | 2021 |
| Effect of titanium on the precipitation behaviors of transmutation elements in tungsten-titanium alloys from first-principles calculations Z Cao, M Pan, K Hu, Z Huang, Y Lv, S Wen, Y Zhao, H Deng Fusion Engineering and Design 158, 111673, 2020 | 6 | 2020 |
| Memristor-Based Artificial Chips B Sun, Y Chen, G Zhou, Z Cao, C Yang, J Du, X Chen, J Shao ACS nano 18 (1), 14-27, 2023 | 5 | 2023 |
| Flexible Memristor-Based Nanoelectronic Devices for Wearable Applications: A Review Z Rao, X Wang, S Mao, J Qin, Y Yang, M Liu, C Ke, Y Zhao, B Sun ACS Applied Nano Materials 6 (20), 18645-18669, 2023 | 5 | 2023 |
| Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis Y Yang, Z Cao, S Mao, J Qin, Z Rao, M Liu, C Ke, Y Zhao, B Sun Applied Materials Today 35, 101938, 2023 | 4 | 2023 |
| Controllable analog-to-digital bipolar resistive switching behavior and mechanism analysis in δ-MnO2-based memristor Z Cao, B Sun, S Mao, G Zhou, X Duan, W Yan, S Sun, X Chen, J Shao Materials Today Physics 38, 101264, 2023 | 4 | 2023 |
| Perovskite material-based memristors for applications in information processing and artificial intelligence M Liu, Z Cao, X Wang, S Mao, J Qin, Y Yang, Z Rao, Y Zhao, B Sun Journal of Materials Chemistry C 11 (39), 13167-13188, 2023 | 4 | 2023 |
| Improved resistive switching performance and mechanism analysis of MoO3 nanorods based memristors J Qin, B Sun, S Mao, Y Yang, M Liu, Z Rao, C Ke, Y Zhao Materials Today Communications 36, 106770, 2023 | 3 | 2023 |
| Memristor based electronic devices towards biomedical applications J Zhang, J Du, C Yang, H Liang, Z Cao, X Duan, W Yan, Y Zhao, B Sun Journal of Materials Chemistry C 12 (1), 50-59, 2024 | 2 | 2024 |
| Research progress of artificial neural systems based on memristors Z Tang, B Sun, G Zhou, Y Zhou, Z Cao, X Duan, W Yan, X Chen, J Shao Materials Today Nano, 100439, 2023 | 2 | 2023 |
| Influence of titanium on the clustering of vacancy, rhenium and osmium in tungsten-titanium alloys: First-principles study Z Cao, R Li, M Pan, X Zhou, J Song, H Tian, S Wen, H Deng Fusion Engineering and Design 178, 113098, 2022 | 1 | 2022 |
| The Stability and Elasticity in Ta-Ti-V Medium-Entropy Alloys Using First-Principles Calculations W Hu, M Pan, Z Huang, H Yang, H Wu, L Pan, Z Cao, Y Zhao Frontiers in Materials 8, 651435, 2021 | 1 | 2021 |
| Transmutation elements Re/Ta effect on vacancy formation and dissociation behavior in W S Wen, K Hu, M Pan, Z Huang, Z Cao, Y Lv, Y Zhao arXiv preprint arXiv:1906.06609, 2019 | 1 | 2019 |
