| 600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013 | 277 | 2013 |
| Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 114 | 2018 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 91 | 2015 |
| Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014 | 63 | 2014 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 51 | 2015 |
| Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li Apl Materials 8 (4), 2020 | 49 | 2020 |
| Nb2CTx MXene Nanosheets for Dye Adsorption Y Yan, H Han, Y Dai, H Zhu, W Liu, X Tang, W Gan, H Li ACS Appl. Nano Mater. 4, 11763−11769, 2021 | 47 | 2021 |
| Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen IEEE Electron Device Letters 38 (7), 937-940, 2017 | 37 | 2017 |
| An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT J Wei, M Zhang, B Li, X Tang, KJ Chen IEEE Transactions on Electron Devices 65 (7), 2757-2764, 2018 | 32 | 2018 |
| Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias B Li, H Li, J Wang, X Tang IEEE Electron Device Letters 40 (9), 1389-1392, 2019 | 29 | 2019 |
| Revealing the nitridation effects on gan surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017 | 29 | 2017 |
| Barrier inhomogeneity of Schottky diode on nonpolar AlN grown by physical vapor transport Q Zhou, H Wu, H Li, X Tang, Z Qin, D Dong, Y Lin, C Lu, R Qiu, R Zheng, ... IEEE Journal of the Electron Devices Society 7, 662-667, 2019 | 27 | 2019 |
| P-doping-free III-nitride high electron mobility light-emitting diodes and transistors B Li, X Tang, J Wang, KJ Chen Applied Physics Letters 105 (3), 2014 | 27 | 2014 |
| Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center Q Zhou, Z Zhang, H Li, S Golovynskyi, X Tang, H Wu, J Wang, B Li Apl Materials 8 (8), 2020 | 26 | 2020 |
| Channel-to-channel coupling in normally-off GaN double-channel MOS-HEMT J Wei, J Lei, X Tang, B Li, S Liu, KJ Chen IEEE Electron Device Letters 39 (1), 59-62, 2017 | 26 | 2017 |
| Homological aspects of the dual Auslander transpose X Tang, Z Huang Forum Mathematicum 27 (6), 3717-3743, 2015 | 24 | 2015 |
| Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector X Tang, F Ji, H Wang, Z Jin, H Li, B Li, J Wang Applied physics letter 119 (1), 013503, 2021 | 23 | 2021 |
| III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015 | 22 | 2015 |
| Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode B Li, X Tang, KJ Chen Applied Physics Letters 106 (9), 2015 | 22 | 2015 |
| Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation Y Lu, B Li, X Tang, Q Jiang, S Yang, Z Tang, KJ Chen IEEE Transactions on Electron Devices 62 (3), 821-827, 2015 | 20 | 2015 |
Baikui LiShenzhen UniversityVerified email at szu.edu.cn
