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massimo camarda
massimo camarda
Laboratory for Micro- and Nanotechnology Paul Scherrer Institute
Verified email at psi.ch
Title
Cited by
Cited by
Year
Mechanisms of growth and defect properties of epitaxial SiC
F La Via, M Camarda, A La Magna
Applied Physics Reviews 1 (3), 2014
1562014
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ...
Sensors 18 (7), 2289, 2018
822018
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
752010
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
582011
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
M Camarda, A La Magna, F La Via
Journal of Computational Physics 227 (2), 1075-1093, 2007
562007
Defect influence on heteroepitaxial 3C-SiC Young’s modulus
R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo
Electrochemical and Solid-State Letters 14 (4), H161, 2011
442011
The role of dielectrophoresis for cancer diagnosis and prognosis
GI Russo, N Musso, A Romano, G Caruso, S Petralia, L Lanzanò, ...
Cancers 14 (1), 198, 2021
432021
Carbon nanotube-based sensing devices for human Arginase-1 detection
S Baldo, S Buccheri, A Ballo, M Camarda, A La Magna, ME Castagna, ...
Sensing and bio-sensing research 7, 168-173, 2016
422016
3C-SiC film growth on Si substrates
A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ...
ECS Transactions 35 (6), 99, 2011
412011
Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations
I Deretzis, M Camarda, F La Via, A La Magna
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235310, 2012
372012
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via
Journal of crystal growth 310 (5), 971-975, 2008
362008
Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111) Si
A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, ...
Applied physics letters 94 (10), 2009
342009
Two-dimensional defect mapping of the interface
J Woerle, BC Johnson, C Bongiorno, K Yamasue, G Ferro, D Dutta, ...
Physical Review Materials 3 (8), 084602, 2019
332019
Structural and electronic characterization of (2, 33) bar-shaped stacking fault in 4H-SiC epitaxial layers
M Camarda, A Canino, A La Magna, F La Via, G Feng, T Kimoto, M Aoki, ...
Applied Physics Letters 98 (5), 2011
312011
Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC
M Camarda, A La Magna, A Severino, F La Via
Thin Solid Films 518 (6), S159-S161, 2010
302010
Optically Active Defects at the Interface
BC Johnson, J Woerle, D Haasmann, CTK Lew, RA Parker, H Knowles, ...
Physical Review Applied 12 (4), 044024, 2019
272019
Silicon carbide X-ray beam position monitors for synchrotron applications
S Nida, A Tsibizov, T Ziemann, J Woerle, A Moesch, C Schulze-Briese, ...
Journal of synchrotron radiation 26 (1), 28-35, 2019
272019
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films
A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, ...
Applied Physics Letters 95 (11), 2009
272009
Gaussian effective potential and superconductivity
M Camarda, GGN Angilella, R Pucci, F Siringo
The European Physical Journal B-Condensed Matter and Complex Systems 33, 273-277, 2003
272003
Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications
R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ...
Materials Science and Engineering: B 198, 14-19, 2015
262015
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