| Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ... Advanced Electronic Materials 8 (9), 2200123, 2022 | 12 | 2022 |
| Potential of transition metal dichalcogenide transistors for flexible electronics applications A Piacentini, A Daus, Z Wang, MC Lemme, D Neumaier Advanced Electronic Materials 9 (8), 2300181, 2023 | 9 | 2023 |
| Button shear testing for adhesion measurements of 2D materials J Schätz, N Nayi, J Weber, C Metzke, S Lukas, J Walter, T Schaffus, ... Nature Communications 15 (1), 1-11, 2024 | 2 | 2024 |
| MoS2/graphene Lateral Heterostructure Field Effect Transistors DS Schneider, E Reato, L Lucchesi, Z Wang, A Piacetini, J Bolten, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 1 | 2021 |
| CVD graphene contacts for lateral heterostructure MoS2 field effect transistors DS Schneider, L Lucchesi, E Reato, Z Wang, A Piacentini, J Bolten, ... npj 2D Materials and Applications 8 (1), 35, 2024 | | 2024 |
| Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2 A Piacentini, DK Polyushkin, B Uzlu, A Grundmann, M Heuken, H Kalisch, ... physica status solidi (a) 221 (10), 2300913, 2024 | | 2024 |
| Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2 A Piacentini, D Polyushkin, B Uzlu, A Grundmann, M Heuken, H Kalisch, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Flexible CMOS inverters based on transition metal dichalcogenides D Polyushkin, A Piacentini, B Uzlu, A Grundmann, M Heuken, H Kalisch, ... | | 2023 |
| Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation A Piacentini, D Schneider, M Otto, B Canto, Z Wang, A Radenovic, A Kis, ... 2021 Device Research Conference (DRC), 1-2, 2021 | | 2021 |
| Piezoresistive 2D MoS2: pressure sensor simulation and fabrication A PIACENTINI Politecnico di Milano, 2018 | | 2018 |
