| Indentation of transversely isotropic power-law hardening materials: computational modelling of the forward and reverse problems TS Bhat, TA Venkatesh Philosophical Magazine 93 (36), 4488-4518, 2013 | 12 | 2013 |
| Abnormal silicon-germanium (SiGe) epitaxial growth in FinFETs TS Bhat, S Shintri, B Chen, HC Lo, J Peng, Y Qi, M Willeman, SK Mishra, ... IEEE Transactions on Semiconductor Manufacturing 33 (2), 291-294, 2020 | 5 | 2020 |
| Removing Organic Residues Using Backside Brush Scrubber Clean KN Chauhan, V Sih, T Bhat, MH Kang, E Kabutoya, G Cheng ECS Transactions 69 (8), 109, 2015 | 5 | 2015 |
| Trade-off between gate oxide integrity and transistor performance for FinFET technology HC Lo, J Peng, C Yong, S Uppal, Y Qi, H Zhan, YP Shen, X Chen, J Yan, ... ECS Journal of Solid State Science and Technology 6 (8), N137, 2017 | 4 | 2017 |
| Parameters influencing unwanted growth during epitaxial growth of SiGe TS Bhat, A Chadwick, H Wei, A Sharma, S Kumarasamy, M Stoker, ... 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2016 | 4 | 2016 |
| On the relationships between hardness and the elastic and plastic properties of transversely isotropic power-law hardening materials TS Bhat, TA Venkatesh Journal of Materials Research 37 (21), 3599-3616, 2022 | 2 | 2022 |
| 2020 Index IEEE Transactions on Semiconductor Manufacturing Vol. 33 AAI Aarnink, Q Abbas, K Adachi, G Aggarwal, O Aktas, O Ali Zargar, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 2020 | | 2020 |
| Critical Dimension Bimodality Both Within Wafer and Within Die T Bhat, G Aggarwal, G Yerubandi, D Bolton IEEE Transactions on Semiconductor Manufacturing, 101, 2020 | | 2020 |
| Surface Copper Voids in BEOL Copper Metal Layers TS Bhat, G Aggarwal, C Montgomery, J Martin IEEE Transactions on Semiconductor Manufacturing 33 (3), 433-435, 2020 | | 2020 |
| Nursery Science and Engineering TB Bhat, TS Bhat | | 2019 |
| A Wet Clean Solution to Reduce Unwanted eSiGe Growth Defect in FinFET J Li, V Sih, T Bhat Surface Preparation and Cleaning Conference SPCC 2017, 191-199, 2017 | | 2017 |
| Indentation Analysis of Transversely Isotropic Materials TS Bhat The Graduate School, Stony Brook University: Stony Brook, NY., 2012 | | 2012 |
| Indentation of Transversely Isotropic Materials TS Bhat State University of New York at Stony Brook, 2012 | | 2012 |
| Indentation Hardness of Transversely Isotropic Power-Law Hardening Materials TS Bhat, TA Venkatesh Available at SSRN 4019915, 0 | | |
| Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology J Peng, S Uppal, Y Qi, H Zhan, YP Shen, X Chen, J Yan, B Zhu, S Shintri, ... | | |
| 3-D Finite Element Analysis of Instrumented Indentation of Transversely Isotropic Materials TS Bhat, TA Venkatesh | | |
Jianwei PengGlobalfoundriesVerified email at globalfoundries.com
