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Nicolas Guillaume
Nicolas Guillaume
Ingénieur de Recherche CEA LETI
Verified email at cea.fr
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Year
Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects
T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ...
IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021
132021
Structural and electrical response of emerging memories exposed to heavy ion radiation
T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ...
ACS nano 16 (9), 14463-14478, 2022
92022
Sub-10-nm ferroelectric Gd-doped HfO2 layers
EV Skopin, N Guillaume, L Alrifai, P Gonon, A Bsiesy
Applied Physics Letters 120 (17), 2022
72022
Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory
G Lefevre, T Dewolf, N Guillaume, S Blonkowski, C Charpin-Nicolle, ...
Journal of Applied Physics 130 (24), 2021
52021
Structural properties of Ge-Sb-Te alloys
H Cinkaya, A Ozturk, ASA Hasekioğlu, ZE Kaya, S Kalem, ...
Solid-State Electronics 185, 108101, 2021
22021
Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM
N Guillaume, G Lefèvre, C Charpin-Nicolle, L Grenouillet, T Vogel, ...
2020 20th European Conference on Radiation and Its Effects on Components and …, 2020
22020
Integration of labeled 4D-STEM SPED data for confirmation of phase identification
T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ...
12022
Improvement of HRS variability in OxRRAM by tailored metallic liner
N Guillaume, M Azzaz, S Blonkowski, E Jalaguier, P Gonon, C Vallée, ...
arXiv preprint arXiv:2010.12210, 2020
12020
Guide des analyses en immunologie: indications, critères de réalisation et limites
MA Alyanakian, A Chevailler, B Le Mauff, J Visentin, P Chrétien, ...
Elsevier Health Sciences, 2020
12020
Comparative study between undoped and doped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase and reducing the crystallization temperature
L Alrifai, E Skopin, N Guillaume, P Gonon, A Bsiesy
E-MRS, 2023
2023
Filamentary type non-volatile memory device
G Navarro, N Guillaume, S Blonkowski, P Gonon, E Jalaguier
US Patent 11,711,927, 2023
2023
Comparison between Doped and Undoped Ferroelectric HfO2
L Alrifai, E Skopin, N Guillaume, P Gonon, A Bsiesy
The AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023), 2023
2023
Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase
L Alrifai, EV Skopin, N Guillaume, P Gonon, A Bsiesy
Applied Physics Letters 123 (3), 2023
2023
Method for manufacturing resistive memory cells
N Guillaume, S Blonkowski, C Charpin-Nicolle, E Jalaguier
US Patent App. 17/820,708, 2023
2023
Sub 10-nm Ferroelectric HfO2 Capacitors Doped with Gd
E Skopin, N Guillaume, L Alrifai, A Bsiesy
Conference on Atomic Layer Deposition (ALD 2022) featuring the 9th …, 2022
2022
Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said device
C Charpin-Nicolle, F Pebay-Peyroula, R Gassilloud, N Guillaume
US Patent App. 17/533,545, 2022
2022
Nano-analytical investigation of the forming process in an-based resistive switching memory
G Lefevre, T Dewolf, N Guillaume
2021
Filamentary type non-volatile memory device
G Navarro, N Guillaume, S Blonkowski, P Gonon, E Jalaguier
2021
Advanced TEM Techniques for Mechanisms and Reliability Analysis in State-of-the-Art OxRAM and PCM Non-Volatile Memory Devices
G Lefèvre, N Guillaume, AL Serra, S David, C Vallée, N Bernier, ...
Electrochemical Society Meeting Abstracts prime2020, 2035-2035, 2020
2020
Heavy ion irradiation hardening study on 4kb arrays HfO-based OxRAM
C Charpin-Nicolle, N Guillaume, G Lefèvre, L Grenouillet, T Vogel, ...
RADECS 2020-Annual European scientific and industrial forum on the effects …, 2020
2020
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