Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu Applied Physics Letters 98 (4), 2011 | 278 | 2011 |
Ionic doping effect in ZrO2 resistive switching memory H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ... Applied Physics Letters 96 (12), 2010 | 216 | 2010 |
Unified physical model of bipolar oxide-based resistive switching memory B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu IEEE Electron Device Letters 30 (12), 1326-1328, 2009 | 205 | 2009 |
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ... 2009 Symposium on VLSI Technology, 30-31, 2009 | 178 | 2009 |
Modeling of retention failure behavior in bipolar oxide-based resistive switching memory B Gao, H Zhang, B Chen, L Liu, X Liu, R Han, J Kang, Z Fang, H Yu, B Yu, ... IEEE Electron Device Letters 32 (3), 276-278, 2011 | 88 | 2011 |
Effects of ionic doping on the behaviors of oxygen vacancies in HfO2 and ZrO2: A first principles study H Zhang, B Gao, S Yu, L Lai, L Zeng, B Sun, L Liu, X Liu, J Lu, R Han, ... 2009 International Conference on Simulation of Semiconductor Processes and …, 2009 | 42 | 2009 |
4.3 Fine-grained adaptive power management of the SPARC M7 processor V Krishnaswamy, J Brooks, G Konstadinidis, C McAllister, H Pham, ... 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 33 | 2015 |
Dynamically enabled branch prediction H Zhang, X Shen, M Shah US Patent 10,001,998, 2018 | 14 | 2018 |
Parallel data sorting H Zhang, X Shen US Patent 9,721,007, 2017 | 11 | 2017 |
Micro-benchmark analysis optimization for microprocessor designs H Zhang, X Shen, S Turullols US Patent 9,483,603, 2016 | 5 | 2016 |
Micro-benchmark analysis optimization for microprocessor designs H Zhang, X Shen, S Turullols US Patent 10,102,323, 2018 | 1 | 2018 |
Adaptive microprocessor power ramp control H Zhang, X Shen, S Turullols, RT Golla US Patent 9,710,042, 2017 | | 2017 |