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Haowei Zhang
Haowei Zhang
在 stanford.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu
Applied Physics Letters 98 (4), 2011
2782011
Ionic doping effect in ZrO2 resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96 (12), 2010
2162010
Unified physical model of bipolar oxide-based resistive switching memory
B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu
IEEE Electron Device Letters 30 (12), 1326-1328, 2009
2052009
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology
B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ...
2009 Symposium on VLSI Technology, 30-31, 2009
1782009
Modeling of retention failure behavior in bipolar oxide-based resistive switching memory
B Gao, H Zhang, B Chen, L Liu, X Liu, R Han, J Kang, Z Fang, H Yu, B Yu, ...
IEEE Electron Device Letters 32 (3), 276-278, 2011
882011
Effects of ionic doping on the behaviors of oxygen vacancies in HfO2 and ZrO2: A first principles study
H Zhang, B Gao, S Yu, L Lai, L Zeng, B Sun, L Liu, X Liu, J Lu, R Han, ...
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
422009
4.3 Fine-grained adaptive power management of the SPARC M7 processor
V Krishnaswamy, J Brooks, G Konstadinidis, C McAllister, H Pham, ...
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
332015
Dynamically enabled branch prediction
H Zhang, X Shen, M Shah
US Patent 10,001,998, 2018
142018
Parallel data sorting
H Zhang, X Shen
US Patent 9,721,007, 2017
112017
Micro-benchmark analysis optimization for microprocessor designs
H Zhang, X Shen, S Turullols
US Patent 9,483,603, 2016
52016
Micro-benchmark analysis optimization for microprocessor designs
H Zhang, X Shen, S Turullols
US Patent 10,102,323, 2018
12018
Adaptive microprocessor power ramp control
H Zhang, X Shen, S Turullols, RT Golla
US Patent 9,710,042, 2017
2017
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