| Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor G Kim, JH In, YS Kim, H Rhee, W Park, H Song, J Park, KM Kim Nature communications 12 (1), 2906, 2021 | 60 | 2021 |
| Ternary Logic with Stateful Neural Networks Using a Bilayered TaOX‐Based Memristor Exhibiting Ternary States YS Kim, J An, JB Jeon, MW Son, S Son, W Park, Y Lee, J Park, GY Kim, ... Advanced Science 9 (5), 2104107, 2022 | 17 | 2022 |
| High Amplitude Spike Generator in Au Nanodot-Incorporated NbOx Mott Memristor W Park, G Kim, JH In, H Rhee, H Song, J Park, A Martinez, KM Kim Nano Letters 23 (11), 5399-5407, 2023 | 9 | 2023 |
| Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit H Rhee, G Kim, H Song, W Park, DH Kim, JH In, Y Lee, KM Kim Nature Communications 14 (1), 7199, 2023 | 2 | 2023 |
| Threshold Modulative Artificial GABAergic Nociceptor G Kim, Y Lee, JB Jeon, WH Cheong, W Park, H Song, KM Kim Advanced Materials 35 (47), 2304148, 2023 | 2 | 2023 |
| Computing with heat using biocompatible mott neurons KM Kim, G Kim, JH In, Y Lee, H Rhee, W Park, H Song, J Park, JB Jeon, ... | 1 | 2023 |
| Probabilistic Computing with NbOx Mott Memristor-based Self-oscillatory pbit H Rhee, G Kim, H Song, W Park, DH Kim, JH In, KK Kim | 1 | 2023 |
| Memristive Explainable Artificial Intelligence Hardware H Song, W Park, G Kim, MG Choi, JH In, H Rhee, KM Kim Advanced Materials, 2400977, 2024 | | 2024 |
| Fully Memristive Elementary Motion Detectors for A Maneuver Prediction H Song, MG Lee, G Kim, DH Kim, G Kim, W Park, H Rhee, JH In, KM Kim Advanced Materials, 2309708, 2024 | | 2024 |
| Study on electrode modification in NbOx-based threshold switching device and its electrical characteristics and oscillation W Park 한국과학기술원, 2021 | | 2021 |
