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Guanyu Zhou
Guanyu Zhou
Verified email at nd.edu
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Year
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
2692018
High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth
G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ...
Advanced Materials 30 (36), 1803109, 2018
1092018
Origin of charge transfer and enhanced electron–phonon coupling in single unit-cell FeSe films on SrTiO3
H Zhang, D Zhang, X Lu, C Liu, G Zhou, X Ma, L Wang, P Jiang, QK Xue, ...
Nature Communications 8 (1), 214, 2017
972017
Ultrafast Dynamics Evidence of High Temperature Superconductivity in Single Unit Cell FeSe on
YC Tian, WH Zhang, FS Li, YL Wu, Q Wu, F Sun, GY Zhou, L Wang, X Ma, ...
Physical Review Letters 116 (10), 107001, 2016
932016
Interface-enhanced electron-phonon coupling and high-temperature superconductivity in potassium-coated ultrathin FeSe films on
C Tang, C Liu, G Zhou, F Li, H Ding, Z Li, D Zhang, Z Li, C Song, S Ji, ...
Physical Review B 93 (2), 020507, 2016
912016
Atomically resolved FeSe/SrTiO3 (001) interface structure by scanning transmission electron microscopy
F Li, Q Zhang, C Tang, C Liu, J Shi, CN Nie, G Zhou, Z Li, W Zhang, ...
2D Materials 3 (2), 024002, 2016
702016
Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO3 (110)
G Zhou, D Zhang, C Liu, C Tang, X Wang, Z Li, C Song, S Ji, K He, ...
Applied Physics Letters 108 (20), 2016
662016
Interface-enhanced high-temperature superconductivity in single-unit-cell films on
F Li, H Ding, C Tang, J Peng, Q Zhang, W Zhang, G Zhou, D Zhang, ...
Physical Review B 91 (22), 220503, 2015
662015
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
H Zhang, Y Chen, G Zhou, C Tang, Z Wang
Nanoscale research letters 7, 1-6, 2012
562012
Superconductivity dichotomy in K-coated single and double unit cell FeSe films on
C Tang, D Zhang, Y Zang, C Liu, G Zhou, Z Li, C Zheng, X Hu, C Song, ...
Physical Review B 92 (18), 180507, 2015
542015
Interface enhanced superconductivity in monolayer FeSe films on MgO (001): charge transfer with atomic substitution
G Zhou, Q Zhang, F Zheng, D Zhang, C Liu, X Wang, CL Song, K He, ...
Science bulletin 63 (12), 747-752, 2018
302018
WSe (2− x) Tex alloys grown by molecular beam epitaxy
AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
222019
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: simulation and experiment
XL Zhou, YH Chen, HY Zhang, GY Zhou, TF Li, JQ Liu, XL Ye, B Xu, ...
Journal of Applied Physics 109 (8), 2011
222011
Temperature dependent photoluminescence of an In (Ga) As/GaAs quantum dot system with different areal density
XL Zhou, YH Chen, JQ Liu, CH Jia, GY Zhou, XL Ye, B Xu, ZG Wang
Journal of Physics D: Applied Physics 43 (29), 295401, 2010
152010
Discovery of an insulating parent phase in single-layer films
Y Hu, Y Xu, YM Zhang, Q Wang, S He, D Liu, A Liang, J Huang, C Li, ...
Physical Review B 102 (11), 115144, 2020
112020
Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO layer on NdGaO (110)
H Yang, G Zhou, Y Zhu, GM Gong, Q Zhang, M Liao, Z Li, C Ding, F Meng, ...
Science Bulletin 64 (8), 490-494, 2019
112019
Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen‐Removal of the Native Tellurium Oxide
CM Smyth, G Zhou, AT Barton, RM Wallace, CL Hinkle
Advanced Materials Interfaces 8 (7), 2002050, 2021
102021
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
GY Zhou, YH Chen, JL Yu, XL Zhou, XL Ye, P Jin, ZG Wang
Applied Physics Letters 98 (7), 2011
102011
Asymmetrically optimized structure in a high-Tc single unit-cell FeSe superconductor
Y Fukaya, G Zhou, F Zheng, P Zhang, L Wang, QK Xue, S Shamoto
Journal of Physics: Condensed Matter 31 (5), 055701, 2018
92018
The two-to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
GY Zhou, YH Chen, CG Tang, LY Liang, P Jin, ZG Wang
Journal of Applied Physics 108 (8), 2010
92010
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