关注
Bin Gao
Bin Gao
Tsinghua University
在 pku.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Fully hardware-implemented memristor convolutional neural network
P Yao, H Wu, B Gao, J Tang, Q Zhang, W Zhang, JJ Yang, H Qian
Nature 577 (7792), 641-646, 2020
15892020
Face classification using electronic synapses
P Yao, H Wu, B Gao, SB Eryilmaz, X Huang, W Zhang, Q Zhang, N Deng, ...
Nature communications 8 (1), 15199, 2017
8512017
A low energy oxidebased electronic synaptic device for neuromorphic visual systems with tolerance to device variation
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Advanced Materials 25 (12), 1774-1779, 2013
5382013
Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges
J Tang, F Yuan, X Shen, Z Wang, M Rao, Y He, Y Sun, X Li, W Zhang, Y Li, ...
Advanced Materials 31 (49), 1902761, 2019
5252019
Neuro-inspired computing chips
W Zhang, B Gao, J Tang, P Yao, S Yu, MF Chang, HJ Yoo, H Qian, H Wu
Nature electronics 3 (7), 371-382, 2020
5092020
A HfOx Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
S Yu, HY Chen, B Gao, J Kang, HSP Wong
ACS nano, 2013
3752013
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 international electron devices meeting, 20.7. 1-20.7. 4, 2012
3732012
Understanding memristive switching via in situ characterization and device modeling
W Sun, B Gao, M Chi, Q Xia, JJ Yang, H Qian, H Wu
Nature communications 10 (1), 3453, 2019
3662019
A compute-in-memory chip based on resistive random-access memory
W Wan, R Kubendran, C Schaefer, SB Eryilmaz, W Zhang, D Wu, S Deiss, ...
Nature 608 (7923), 504-512, 2022
3392022
Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing
Y Zhong, J Tang, X Li, B Gao, H Qian, H Wu
Nature communications 12 (1), 408, 2021
2972021
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu
Applied Physics Letters 98 (4), 2011
2492011
Binary neural network with 16 Mb RRAM macro chip for classification and online training
S Yu, Z Li, PY Chen, H Wu, B Gao, D Wang, W Wu, H Qian
2016 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2016
2432016
Reliability of analog resistive switching memory for neuromorphic computing
M Zhao, B Gao, J Tang, H Qian, H Wu
Applied Physics Reviews 7 (1), 2020
2392020
Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
W Wu, H Wu, B Gao, N Deng, S Yu, H Qian
IEEE Electron Device Letters 38 (8), 1019-1022, 2017
2312017
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012
2312012
33.2 A fully integrated analog ReRAM based 78.4 TOPS/W compute-in-memory chip with fully parallel MAC computing
Q Liu, B Gao, P Yao, D Wu, J Chen, Y Pang, W Zhang, Y Liao, CX Xue, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 500-502, 2020
2202020
Ionic doping effect in ZrO resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96, 123502, 2010
2112010
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
2092013
Unified physical model of bipolar oxide-based resistive switching memory
B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu
IEEE Electron Device Letters 30 (12), 1326-1328, 2009
2072009
Alloying conducting channels for reliable neuromorphic computing
H Yeon, P Lin, C Choi, SH Tan, Y Park, D Lee, J Lee, F Xu, B Gao, H Wu, ...
Nature nanotechnology 15 (7), 574-579, 2020
1982020
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