| Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions Y Zhang, W Zhao, Y Lakys, JO Klein, JV Kim, D Ravelosona, C Chappert IEEE transactions on Electron devices 59 (3), 819-826, 2012 | 404 | 2012 |
| Failure and reliability analysis of STT-MRAM WS Zhao, Y Zhang, T Devolder, JO Klein, D Ravelosona, C Chappert, ... Microelectronics Reliability 52 (9-10), 1848-1852, 2012 | 251 | 2012 |
| Low power magnetic full-adder based on spin transfer torque MRAM E Deng, Y Zhang, J Klein, D Ravelosona, C Chappert, W Zhao Magnetics, IEEE Transactions on 49 (9), 4982-4987, 2013 | 152 | 2013 |
| Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ... IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016 | 140 | 2016 |
| Perpendicular-magnetic-anisotropy CoFeB racetrack memory Y Zhang, WS Zhao, D Ravelosona, JO Klein, JV Kim, C Chappert Journal of Applied Physics 111 (9), 2012 | 138 | 2012 |
| Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology W Kang, Y Zhang, Z Wang, JO Klein, C Chappert, D Ravelosona, G Wang, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (2), 1-42, 2015 | 118 | 2015 |
| Ultra Low Power Magnetic Flip-Flop Based on Checkpointing/Power Gating and Self-Enable Mechanisms D Chabi, W Zhao, E Deng, Y Zhang, NB Romdhane, JO Klein, C Chappert IEEE, 2014 | 118 | 2014 |
| Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... Circuits and Systems I: Regular Papers, IEEE Transactions on 61 (2), 443-454, 2013 | 113 | 2013 |
| Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses Y Wang, Y Zhang, EY Deng, JO Klein, LAB Naviner, WS Zhao Microelectronics Reliability 54 (9-10), 1774-1778, 2014 | 105 | 2014 |
| Magnetic Adder Based on Racetrack Memory HP Trinh, W Zhao, JO Klein, Y Zhang, D Ravelsona, C Chappert Circuits and Systems I: Regular Papers, IEEE Transactions on 60 (6), 1469-1477, 2013 | 105 | 2013 |
| Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient Z Zheng, Y Zhang, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ... Nature Communications 12, 4555, 2021 | 97 | 2021 |
| Compact model of subvolume MTJ and its design application at nanoscale technology nodes Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015 | 92 | 2015 |
| All spin artificial neural networks based on compound spintronic synapse and neuron D Zhang, L Zeng, K Cao, M Wang, S Peng, Y Zhang, Y Zhang, JO Klein, ... IEEE transactions on biomedical circuits and systems 10 (4), 828-836, 2016 | 90 | 2016 |
| Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications Y Zhang, W Zhao, G Prenat, T Devolder, JO Klein, C Chappert, B Dieny, ... IEEE Transactions on Magnetics 49 (7), 4375-4378, 2013 | 86 | 2013 |
| Skyrmions in magnetic tunnel junctions X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ... ACS applied materials & interfaces 10 (19), 16887-16892, 2018 | 83 | 2018 |
| Self-enabled “error-free” switching circuit for spin transfer torque MRAM and logic Y Lakys, WS Zhao, T Devolder, Y Zhang, JO Klein, D Ravelosona, ... IEEE Transactions on Magnetics 48 (9), 2403-2406, 2012 | 75 | 2012 |
| Separated Pre-Charge Sensing Amplifier for Deep Submicron MTJ/CMOS Hybrid Logic Circuits W Kang, E Deng, J Klein, Y Zhang, C CHAPPERT, D Ravelosona, ... IEEE, 2014 | 70* | 2014 |
| Tunnel junction with perpendicular magnetic anisotropy: Status and challenges M Wang, Y Zhang, X Zhao, W Zhao Micromachines 6 (8), 1023-1045, 2015 | 62 | 2015 |
| Current-limiting challenges for all-spin logic devices L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao Scientific reports 5 (1), 14905, 2015 | 60 | 2015 |
| Ultra-high density content addressable memory based on current induced domain wall motion in magnetic track Y Zhang, W Zhao, JO Klein, D Ravelsona, C Chappert IEEE transactions on magnetics 48 (11), 3219-3222, 2012 | 58 | 2012 |
Weisheng ZhaoFert Beijing Institute, Beihang University在 buaa.edu.cn 的电子邮件经过验证
