| X-ray diffraction analysis of cubic zincblende III-nitrides M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ... Journal of Physics D: Applied Physics 50 (43), 433002, 2017 | 66 | 2017 |
| Orientation control of GaN {112¯ 2} and {101¯ 3¯} grown on (101¯ 0) sapphire by metal-organic vapor phase epitaxy S Ploch, M Frentrup, T Wernicke, M Pristovsek, M Weyers, M Kneissl Journal of crystal growth 312 (15), 2171-2174, 2010 | 61 | 2010 |
| Crystal orientation of GaN layers on (1010) m‐plane sapphire M Frentrup, S Ploch, M Pristovsek, M Kneissl physica status solidi (b) 248 (3), 583-587, 2011 | 58 | 2011 |
| Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction M Frentrup, N Hatui, T Wernicke, J Stellmach, A Bhattacharya, M Kneissl Journal of Applied Physics 114 (21), 213509, 2013 | 53 | 2013 |
| MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl Journal of crystal growth 355 (1), 59-62, 2012 | 51 | 2012 |
| Structural and optical properties of semipolar (112 2) AlGaN grown on (101 0) sapphire by metal–organic vapor phase epitaxy J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ... Journal of crystal growth 367, 42-47, 2013 | 45 | 2013 |
| Growth and characterizations of semipolar () InN DV Dinh, D Skuridina, S Solopow, M Frentrup, M Pristovsek, P Vogt, ... Journal of Applied Physics 112 (1), 013530, 2012 | 37 | 2012 |
| Investigation of the temperature dependent efficiency droop in UV LEDs NL Ploch, S Einfeldt, M Frentrup, J Rass, T Wernicke, A Knauer, V Kueller, ... Semiconductor science and technology 28 (12), 125021, 2013 | 29 | 2013 |
| Single phase {112¯ 2} GaN on (101¯ 0) sapphire grown by metal-organic vapor phase epitaxy S Ploch, JB Park, J Stellmach, T Schwaner, M Frentrup, T Niermann, ... Journal of crystal growth 331 (1), 25-28, 2011 | 28 | 2011 |
| Analysis of crystal orientation in AlN layers grown on m-plane sapphire A Mogilatenko, H Kirmse, J Stellmach, M Frentrup, F Mehnke, T Wernicke, ... Journal of crystal growth 400, 54-60, 2014 | 27 | 2014 |
| Indium incorporation efficiency and critical layer thickness of (201) InGaN layers on GaN S Ploch, T Wernicke, M Frentrup, M Pristovsek, M Weyers, M Kneissl Applied Physics Letters 101 (20), 202102, 2012 | 26 | 2012 |
| Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN LY Lee, M Frentrup, MJ Kappers, RA Oliver, CJ Humphreys, DJ Wallis Journal of Applied Physics 124 (10), 105302, 2018 | 25 | 2018 |
| Photoluminescence studies of cubic GaN epilayers SA Church, S Hammersley, PW Mitchell, MJ Kappers, SL Sahonta, ... physica status solidi (b) 254 (8), 1600733, 2017 | 25 | 2017 |
| Excitonic recombination in epitaxial lateral overgrown AlN on sapphire C Reich, M Feneberg, V Kueller, A Knauer, T Wernicke, J Schlegel, ... Applied Physics Letters 103 (21), 212108, 2013 | 25 | 2013 |
| Optimizing GaN () hetero‐epitaxial templates grown on () sapphire M Pristovsek, M Frentrup, Y Han, CJ Humphreys physica status solidi (b) 253 (1), 61-66, 2016 | 24 | 2016 |
| Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM LY Lee, M Frentrup, P Vacek, MJ Kappers, DJ Wallis, RA Oliver Journal of Applied Physics 125 (10), 105303, 2019 | 22 | 2019 |
| Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire M Feneberg, M Winkler, J Klamser, J Stellmach, M Frentrup, S Ploch, ... Applied Physics Letters 106 (18), 182102, 2015 | 21 | 2015 |
| MOVPE growth of semipolar (112¯ 2) Al1− xInxN across the alloy composition range (0≤ x≤ 0.55) N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ... Journal of Crystal Growth 411, 106-109, 2015 | 21 | 2015 |
| Low defect large area semi‐polar (11 2) GaN grown on patterned (113) silicon M Pristovsek, Y Han, T Zhu, M Frentrup, MJ Kappers, CJ Humphreys, ... physica status solidi (b) 252 (5), 1104-1108, 2015 | 20 | 2015 |
| Ti alloyed α-Ga2O3: route towards wide band gap engineering A Barthel, J Roberts, M Napari, M Frentrup, T Huq, A Kovács, R Oliver, ... Micromachines 11 (12), 1128, 2020 | 19 | 2020 |
