| Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications S Ghosh, KC Lin, CH Tsai, H Kumar, Q Chen, L Zhang, B Son, CS Tan, ... Micromachines 11 (9), 795, 2020 | 32 | 2020 |
| Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors S GHOSH, KC LIN, CH TSAI, KH LEE, Q CHEN, B SON, ... Optics Express 28 (16), 23739-23747, 2020 | 28 | 2020 |
| Design and Modeling of High-Performance DBR-based Resonant-Cavity-Enhanced GeSn Photodetector for Fibre-Optic Telecommunication Networks S Ghosh, H Kumar, B Mukhopadhyay, GE Chang IEEE Sensors Journal 21 (8), 9900-9908, 2021 | 25 | 2021 |
| Performance analysis of GeSn/SiGeSn quantum well infrared photodetector in terahertz wavelength region S Ghosh, B Mukhopadhyay, G Sen, PK Basu Physica E: Low-dimensional Systems and Nanostructures 115, 113692, 2020 | 21 | 2020 |
| Design and Analysis of GeSn-based Resonant-Cavity-Enhanced Photodetectors for Optical Communication Applications S Ghosh, B Mukhopadhyay, GE Chang IEEE Sensors Journal 20 (14), 7801-7809, 2020 | 19 | 2020 |
| Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity S Ghosh, A Bhattacharyya, G Sen, B Mukhopadhyay Journal of Computational Electronics 20, 1224-1233, 2021 | 12 | 2021 |
| Study of Si-Ge-Sn based heterobipolar phototransistor (HPT) exploiting quantum confined Stark effect and Franz Keldysh effect with and without resonant cavity S Ghosh, B Mukhopadhyay, G Sen, PK Basu Physica E: Low-dimensional Systems and Nanostructures 106, 62-67, 2019 | 12 | 2019 |
| Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics S Ghosh, R Bansal, G Sun, RA Soref, HH Cheng, GE Chang Sensors 22 (11), 3978 (1-20), 2022 | 10 | 2022 |
| Performance enhancement of GeSn transistor laser with symmetric and asymmetric multiple quantum well in the base S Ghosh, B Mukhopadhyay, G Sen Semiconductors 54, 77-84, 2020 | 7 | 2020 |
| Dark Current Analysis on GeSn p-i-n Photodetectors S Ghosh, G Sun, TA Morgan, GT Forcherio, HH Cheng, GE Chang Sensors 23 (17), 7531, 2023 | 6 | 2023 |
| Analysis of some important parameters of Si-Ge-Sn RCE-HPT exploiting QCSE and FKE S Ghosh, B Mukhopadhyay, G Sen, PK Basu 2020 URSI Regional Conference on Radio Science (URSI-RCRS), 1-2, 2020 | 6 | 2020 |
| Study of High-Frequency Performance in GeSn-Based QWIP S Ghosh, S Dey, B Mukhopadhyay, G Sen Computers and Devices for Communication: Proceedings of CODEC 2019, 448-452, 2021 | 2 | 2021 |
| Comparative Study of Si-Ge-Sn Resonant Cavity Enhanced Heterojunction Bipolar Phototransistor under Quantum Confined Stark Effect and Franz Keldysh Effect at 1.55 µm S Ghosh IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) 17 (1 …, 2022 | 1 | 2022 |
| High-performance Ge-on-insulator lateral pin waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths TY Huang, R Bansal, S Ghosh, KH Lee, Q Chen, CS Tan, GE Chang Optics Letters 49 (5), 1281-1284, 2024 | | 2024 |
| Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications PH Lin, S Ghosh, GE Chang Sensors 24 (4), 1263, 2024 | | 2024 |
| Study the performance of GeSn/SiGeSn quantum well infrared photodetector on silicon-on-insulator in midinfrared region S Ghosh IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) 17 (5 …, 2022 | | 2022 |
Guo-En Chang (張國恩)National Chung Cheng University (國立中正大學)Verified email at ccu.edu.tw
