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Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
K Chen, X Wan, J Wen, W Xie, Z Kang, X Zeng, H Chen, JB Xu
Acs Nano 9 (10), 9868-9876, 2015
Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy
K Chen, X Wan, W Xie, J Wen, Z Kang, X Zeng, H Chen, J Xu
Advanced Materials 27 (41), 6431-6437, 2015
High-quality large-area graphene from dehydrogenated polycyclic aromatic hydrocarbons
X Wan, K Chen, D Liu, J Chen, Q Miao, J Xu
Chemistry of Materials 24 (20), 3906-3915, 2012
Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries
L Tao, K Chen, Z Chen, W Chen, X Gui, H Chen, X Li, JB Xu
ACS applied materials & interfaces 9 (13), 12073-12081, 2017
1T′ transition metal telluride atomic layers for plasmon-free SERS at femtomolar levels
L Tao, K Chen, Z Chen, C Cong, C Qiu, J Chen, X Wang, H Chen, T Yu, ...
Journal of the American Chemical Society 140 (28), 8696-8704, 2018
A Simple Method for Synthesis of High‐Quality Millimeter‐Scale 1T′ Transition‐Metal Telluride and Near‐Field Nanooptical Properties
K Chen, Z Chen, X Wan, Z Zheng, F Xie, W Chen, X Gui, H Chen, W Xie, ...
Advanced Materials 29 (38), 1700704, 2017
Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions
K Chen, X Wan, J Xu
Advanced Functional Materials 27 (19), 1603884, 2017
N 掺杂 p-型 ZnO 的第一性原理计算
陈琨, 范广涵, 章勇, 丁少锋
物理化学学报 24 (01), 61-66, 2008
Trapping and assembling of particles and live cells on large-scale random gold nano-island substrates
Z Kang, J Chen, SY Wu, K Chen, SK Kong, KT Yong, HP Ho
Scientific reports 5, 9978, 2015
Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field
K Chen, X Wang, JB Xu, L Pan, X Wang, Y Shi
The Journal of Physical Chemistry C 116 (10), 6259-6267, 2012
In-N 共掺杂 ZnO 第一性原理计算
陈琨, 范广涵, 章勇, 丁少锋
物理学报 57 (005), 3138-3147, 2008
Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors
X. Wan, K. Chen, Z. F. Chen, F. Y. Xie, X. L. Zeng, W. G. Xie, J. Chen
Adv. Funct. Mater 27, 1603998, 2017
Enhanced performance and fermi-level estimation of coronene-derived graphene transistors on self-assembled monolayer modified substrates in large areas
X Wan, K Chen, J Du, D Liu, J Chen, X Lai, W Xie, J Xu
The Journal of Physical Chemistry C 117 (9), 4800-4807, 2013
Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature
K Chen, X Wan, D Liu, Z Kang, W Xie, J Chen, Q Miao, J Xu
Nanoscale 5 (13), 5784-5793, 2013
Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure
K Chen, X Wan, JB Xu
Journal of Materials Chemistry C 1 (32), 4869-4878, 2013
Mn 掺杂 ZnO 光学特性的第一性原理计算
陈琨, 范广涵, 章勇
物理学报 57 (002), 1054-1060, 2008
Plasmonic graded nano-disks as nano-optical conveyor belt
Z Kang, H Lu, J Chen, K Chen, F Xu, HP Ho
Optics express 22 (16), 19567-19572, 2014
Interface engineering for CVD graphene: current status and progress
X Wan, K Chen, J Xu
Small 10 (22), 4443-4454, 2014
Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self‐Limited Growth Strategy by Interface Engineering
X Wan, K Chen, W Xie, J Wen, H Chen, JB Xu
Small 12 (4), 438-445, 2016
Facet-dependent property of sequentially deposited perovskite thin films: chemical origin and self-annihilation
T Zhang, M Long, K Yan, X Zeng, F Zhou, Z Chen, X Wan, K Chen, P Liu, ...
ACS applied materials & interfaces 8 (47), 32366-32375, 2016
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