Kun CHEN
Kun CHEN
Verified email at mail.sysu.edu.cn
Title
Cited by
Cited by
Year
Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
K Chen, X Wan, J Wen, W Xie, Z Kang, X Zeng, H Chen, JB Xu
Acs Nano 9 (10), 9868-9876, 2015
1772015
Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy
K Chen, X Wan, W Xie, J Wen, Z Kang, X Zeng, H Chen, J Xu
Advanced Materials 27 (41), 6431-6437, 2015
1292015
High-quality large-area graphene from dehydrogenated polycyclic aromatic hydrocarbons
X Wan, K Chen, D Liu, J Chen, Q Miao, J Xu
Chemistry of Materials 24 (20), 3906-3915, 2012
1012012
Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries
L Tao, K Chen, Z Chen, W Chen, X Gui, H Chen, X Li, JB Xu
ACS applied materials & interfaces 9 (13), 12073-12081, 2017
622017
1T′ transition metal telluride atomic layers for plasmon-free SERS at femtomolar levels
L Tao, K Chen, Z Chen, C Cong, C Qiu, J Chen, X Wang, H Chen, T Yu, ...
Journal of the American Chemical Society 140 (28), 8696-8704, 2018
542018
A Simple Method for Synthesis of High‐Quality Millimeter‐Scale 1T′ Transition‐Metal Telluride and Near‐Field Nanooptical Properties
K Chen, Z Chen, X Wan, Z Zheng, F Xie, W Chen, X Gui, H Chen, W Xie, ...
Advanced Materials 29 (38), 1700704, 2017
452017
Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions
K Chen, X Wan, J Xu
Advanced Functional Materials 27 (19), 1603884, 2017
412017
N 掺杂 p-型 ZnO 的第一性原理计算
陈琨, 范广涵, 章勇, 丁少锋
物理化学学报 24 (01), 61-66, 2008
392008
Trapping and assembling of particles and live cells on large-scale random gold nano-island substrates
Z Kang, J Chen, SY Wu, K Chen, SK Kong, KT Yong, HP Ho
Scientific reports 5, 9978, 2015
362015
Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field
K Chen, X Wang, JB Xu, L Pan, X Wang, Y Shi
The Journal of Physical Chemistry C 116 (10), 6259-6267, 2012
302012
In-N 共掺杂 ZnO 第一性原理计算
陈琨, 范广涵, 章勇, 丁少锋
物理学报 57 (005), 3138-3147, 2008
282008
Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors
X. Wan, K. Chen, Z. F. Chen, F. Y. Xie, X. L. Zeng, W. G. Xie, J. Chen
Adv. Funct. Mater 27, 1603998, 2017
272017
Enhanced performance and fermi-level estimation of coronene-derived graphene transistors on self-assembled monolayer modified substrates in large areas
X Wan, K Chen, J Du, D Liu, J Chen, X Lai, W Xie, J Xu
The Journal of Physical Chemistry C 117 (9), 4800-4807, 2013
272013
Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature
K Chen, X Wan, D Liu, Z Kang, W Xie, J Chen, Q Miao, J Xu
Nanoscale 5 (13), 5784-5793, 2013
272013
Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure
K Chen, X Wan, JB Xu
Journal of Materials Chemistry C 1 (32), 4869-4878, 2013
272013
Mn 掺杂 ZnO 光学特性的第一性原理计算
陈琨, 范广涵, 章勇
物理学报 57 (002), 1054-1060, 2008
272008
Plasmonic graded nano-disks as nano-optical conveyor belt
Z Kang, H Lu, J Chen, K Chen, F Xu, HP Ho
Optics express 22 (16), 19567-19572, 2014
262014
Interface engineering for CVD graphene: current status and progress
X Wan, K Chen, J Xu
Small 10 (22), 4443-4454, 2014
232014
Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self‐Limited Growth Strategy by Interface Engineering
X Wan, K Chen, W Xie, J Wen, H Chen, JB Xu
Small 12 (4), 438-445, 2016
172016
Facet-dependent property of sequentially deposited perovskite thin films: chemical origin and self-annihilation
T Zhang, M Long, K Yan, X Zeng, F Zhou, Z Chen, X Wan, K Chen, P Liu, ...
ACS applied materials & interfaces 8 (47), 32366-32375, 2016
152016
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