Yossi Rosenwaks
Yossi Rosenwaks
Tel Aviv University
Why lead methylammonium tri-iodide perovskite-based solar cells require a mesoporous electron transporting scaffold (but not necessarily a hole conductor)
E Edri, S Kirmayer, A Henning, S Mukhopadhyay, K Gartsman, ...
Nano letters 14 (2), 1000-1004, 2014
Hot-carrier cooling in GaAs: Quantum wells versus bulk
Y Rosenwaks, MC Hanna, DH Levi, DM Szmyd, RK Ahrenkiel, AJ Nozik
Physical Review B 48 (19), 14675, 1993
Kelvin probe force microscopy of semiconductor surface defects
Y Rosenwaks, R Shikler, T Glatzel, S Sadewasser
Physical Review B 70 (8), 085320, 2004
Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution
O Tal, Y Rosenwaks, Y Preezant, N Tessler, CK Chan, A Kahn
Physical review letters 95 (25), 256405, 2005
Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP
R Cohen, L Kronik, A Shanzer, D Cahen, A Liu, Y Rosenwaks, JK Lorenz, ...
Journal of the American Chemical Society 121 (45), 10545-10553, 1999
Yellow luminescence and related deep levels in unintentionally doped GaN films
I Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J Salzman
Physical Review B 59 (15), 9748, 1999
Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy
G Rosenman, P Urenski, A Agronin, Y Rosenwaks, M Molotskii
Applied physics letters 82 (1), 103-105, 2003
Ferroelectric domain breakdown
M Molotskii, A Agronin, P Urenski, M Shvebelman, G Rosenman, ...
Physical review letters 90 (10), 107601, 2003
Measurement of active dopant distribution and diffusion in individual silicon nanowires
E Koren, N Berkovitch, Y Rosenwaks
Nano letters 10 (4), 1163-1167, 2010
Fabrication of a photoelectronic device by direct chemical binding of the photosynthetic reaction center protein to metal surfaces
L Frolov, Y Rosenwaks, C Carmeli, I Carmeli
Advanced Materials 17 (20), 2434-2437, 2005
Reconstruction of electrostatic force microscopy images
E Strassburg, A Boag, Y Rosenwaks
Review of Scientific instruments 76 (8), 083705, 2005
The electronic structure of metal oxide/organo metal halide perovskite junctions in perovskite based solar cells
A Dymshits, A Henning, G Segev, Y Rosenwaks, L Etgar
Scientific reports 5 (1), 1-6, 2015
Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy
E Koren, Y Rosenwaks, JE Allen, ER Hemesath, LJ Lauhon
Applied Physics Letters 95 (9), 092105, 2009
Dynamics of ferroelectric domain growth in the field of atomic force microscope
A Agronin, M Molotskii, Y Rosenwaks, G Rosenman, BJ Rodriguez, ...
Journal of Applied Physics 99 (10), 104102, 2006
Potential imaging of operating light-emitting devices using Kelvin force microscopy
R Shikler, T Meoded, N Fried, Y Rosenwaks
Applied physics letters 74 (20), 2972-2974, 1999
Obtaining uniform dopant distributions in VLS-grown Si nanowires
E Koren, JK Hyun, U Givan, ER Hemesath, LJ Lauhon, Y Rosenwaks
Nano letters 11 (1), 183-187, 2011
Resolution of Kelvin probe force microscopy in ultrahigh vacuum: comparison of experiment and simulation
S Sadewasser, T Glatzel, R Shikler, Y Rosenwaks, MC Lux-Steiner
Applied Surface Science 210 (1-2), 32-36, 2003
Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP
Y Rosenwaks, Y Shapira, D Huppert
Physical Review B 45 (16), 9108, 1992
Kelvin probe force microscopy on III–V semiconductors: the effect of surface defects on the local work function
T Glatzel, S Sadewasser, R Shikler, Y Rosenwaks, MC Lux-Steiner
Materials Science and Engineering: B 102 (1-3), 138-142, 2003
Fermi level pinning by gap states in organic semiconductors
S Yogev, R Matsubara, M Nakamura, U Zschieschang, H Klauk, ...
Physical review letters 110 (3), 036803, 2013
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