| Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors X Tang, KH Li, Y Zhao, Y Sui, H Liang, Z Liu, CH Liao, W Babatain, R Lin, ... ACS Applied Materials & Interfaces 14 (1), 1304-1314, 2021 | 33 | 2021 |
| Chemical solution deposition of epitaxial indium-and aluminum-doped Ga2O3 thin films on sapphire with tunable bandgaps X Tang, KH Li, CH Liao, JMT Vasquez, C Wang, N Xiao, X Li Journal of the European Ceramic Society 42 (1), 175-180, 2022 | 26 | 2022 |
| Hydrophilicity reinforced adhesion of anodic alumina oxide template films to conducting substrates for facile fabrication of highly ordered nanorod arrays C Wang, G Wang, R Yang, X Sun, H Ma, S Sun Langmuir 33 (2), 503-509, 2017 | 21 | 2017 |
| Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures C Wang, F AlQatari, V Khandelwal, R Lin, X Li Applied Surface Science 608, 155099, 2023 | 10 | 2023 |
| A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022 | 10 | 2022 |
| UV light-emitting diode with buried polarization-induced n-AlGaN/InGaN/p-AlGaN tunneling junction Y Lu, C Wang, VP De Oliveira, Z Liu, X Li IEEE Photonics Technology Letters 33 (16), 808-811, 2021 | 8 | 2021 |
| Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023 | 7 | 2023 |
| Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors C Wang, X Xu, S Tyagi, PC Rout, U Schwingenschlögl, B Sarkar, ... Advanced Materials 35 (22), 2211738, 2023 | 6 | 2023 |
| Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure C Wang, X Li Applied Surface Science 622, 156954, 2023 | 4 | 2023 |
| Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer C Wang, Y Lu, CH Liao, S Chandroth, S Yuvaraja, X Li Japanese Journal of Applied Physics 61 (6), 060906, 2022 | 4 | 2022 |
| Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures C Wang, X Li physica status solidi (RRL)–Rapid Research Letters 17 (3), 2200413, 2023 | 2 | 2023 |
| In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor X Tang, Y Zhao, KH Li, C Liu, H Faber, W Babatain, CH Liao, S Yuvaraja, ... Advanced Electronic Materials, 2400046, 2024 | | 2024 |
