| Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering J Ge, D Remiens, X Dong, Y Chen, J Costecalde, F Gao, F Cao, G Wang Applied Physics Letters 105 (11), 2014 | 103 | 2014 |
| Flexible artificial nociceptor using a biopolymer-based forming-free memristor J Ge, S Zhang, Z Liu, Z Xie, S Pan Nanoscale 11 (14), 6591-6601, 2019 | 93 | 2019 |
| Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device J Ge, M Chaker ACS applied materials & interfaces 9 (19), 16327-16334, 2017 | 82 | 2017 |
| Enhanced polarization switching and energy storage properties of Pb0. 97La0. 02 (Zr0. 95Ti0. 05) O3 antiferroelectric thin films with LaNiO3 oxide top electrodes J Ge, X Dong, Y Chen, F Cao, G Wang Applied Physics Letters 102 (14), 2013 | 56 | 2013 |
| Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations J Ge, D Remiens, J Costecalde, Y Chen, X Dong, G Wang Applied Physics Letters 103 (16), 2013 | 53 | 2013 |
| Memristive synapses with high reproducibility for flexible neuromorphic networks based on biological nanocomposites J Ge, D Li, C Huang, X Zhao, J Qin, H Liu, W Ye, W Xu, Z Liu, S Pan Nanoscale 12 (2), 720-730, 2020 | 52 | 2020 |
| High sensitivity and rapid response ultraviolet photodetector of a tetragonal CsPbCl3 perovskite single crystal Z Rao, W Liang, H Huang, J Ge, W Wang, S Pan Optical Materials Express 10 (6), 1374-1382, 2020 | 39 | 2020 |
| Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3 thin films X Guo, J Ge, F Ponchel, D Rémiens, Y Chen, X Dong, G Wang Thin Solid Films 632, 93-96, 2017 | 37 | 2017 |
| Reliable memristor based on ultrathin native silicon oxide Z Ma, J Ge*, W Chen, X Cao, S Diao, Z Liu, S Pan* ACS Applied Materials & Interfaces 14 (18), 21207-21216, 2022 | 35 | 2022 |
| Dynamic hysteresis and scaling behavior in epitaxial antiferroelectric film J Ge, Y Chen, X Dong, D Remiens, X Guo, F Cao, G Wang Thin Solid Films 584, 108-111, 2015 | 30 | 2015 |
| Effect of electrode materials on the scaling behavior of energy density in Pb (Zr0. 96Ti0. 03) Nb0. 01O3 antiferroelectric films J Ge, G Pan, D Remiens, Y Chen, F Cao, X Dong, G Wang Applied Physics Letters 101 (11), 2012 | 30 | 2012 |
| Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique X Guo, Y Chen, G Wang, Y Zhang, J Ge, X Tang, F Ponchel, D Rémiens, ... Journal of Alloys and Compounds 671, 234-237, 2016 | 28 | 2016 |
| A sub-500 mV monolayer hexagonal boron nitride based memory device J Ge, H Huang, Z Ma, W Chen, X Cao, H Fang, J Yan, Z Liu, W Wang, ... Materials & Design 198, 109366, 2021 | 27 | 2021 |
| Fabrication and Dielectric Properties of Ba0.63Sr0.37TiO3 Thin Films on SiC Substrates L Song, Y Chen, G Wang, L Yang, J Ge, X Dong, P Xiang, Y Zhang, ... Journal of the American Ceramic Society 97 (10), 3048-3051, 2014 | 18 | 2014 |
| Ultrahigh detectivity ultraviolet photodetector based on orthorhombic phase CsPbI3 microwire using temperature self-regulating solar reactor S Pan, Z Rao, Y Wu, Z Liu, J Ge, S Zhang Solar Energy Materials and Solar Cells 209, 110477, 2020 | 15 | 2020 |
| Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition Z Fan, M Zhu, S Pan, J Ge, L Hu Ceramics International 47 (10), 13655-13659, 2021 | 12 | 2021 |
| Solution-processed inorganic δ-phase CsPbI 3 electronic synapses with short-and long-term plasticity in a crossbar array structure J Ge, Z Ma, W Chen, X Cao, J Yan, H Fang, J Qin, Z Liu, S Pan Nanoscale 12 (25), 13558-13566, 2020 | 12 | 2020 |
| Water engineering in lead free CsCu2I3 perovskite for high performance planar heterojunction photodetector applications K Bai, Z Fan, G Zhao, X He, Z Zhu, S Pan*, J Ge*, C He Ceramics International 49 (2), 1970-1979, 2023 | 11 | 2023 |
| Constructing a small core–multishell nanostructure for Ho-based red upconversion emission H Lin, Z Cheng, D Xu, X Zheng, J Ge, L Xu, Y Ma, S Yang, Y Zhang Journal of Materials Chemistry C 9 (12), 4385-4392, 2021 | 10 | 2021 |
| Analog tunnel memory based on programmable metallization for passive neuromorphic circuits Z Ma, J Ge*, W Chen, X Cao, S Diao, H Huang, Z Liu, W Wang, S Pan* ACS Applied Materials & Interfaces 14 (42), 47941-47951, 2022 | 5 | 2022 |
