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Yuseong Jang
Yuseong Jang
Department of Electrical and Computer Engineering, Seoul National University
Verified email at snu.ac.kr
Title
Cited by
Cited by
Year
Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing
Y Jang, J Park, J Kang, SY Lee
ACS Applied Electronic Materials 4 (4), 1427-1448, 2022
572022
Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se2 Solar Cells
H Lee, Y Jang, SW Nam, C Jung, PP Choi, J Gwak, JH Yun, K Kim, B Shin
ACS applied materials & interfaces 11 (39), 35653-35660, 2019
482019
Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing
J Park, Y Jang, J Lee, S An, J Mok, SY Lee
Advanced Electronic Materials 9 (6), 2201306, 2023
202023
Importance of Fine Control of Se Flux for Improving Performances of Sb2Se3 Solar Cells Prepared by Vapor Transport Deposition
J Kim, S Ji, Y Jang, G Jeong, J Choi, D Kim, SW Nam, B Shin
Solar RRL 5 (8), 2100327, 2021
122021
In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses
Y Jang, SY Lee
ACS Applied Electronic Materials 5 (1), 509-519, 2022
102022
Optimization of post-annealing temperature for high-performance synaptic transistors based on In–Ga–Zn–O channel and trap layers
J Park, Y Jang, SY Lee
AIP Advances 13 (12), 2023
22023
Effects of CsF Post-deposition Treatment on Cu(In, Ga)Se2 Thin Films and Solar Cells
H Lee, K Kim, Y Jang, S Nam, B Shin
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 0622-0625, 2019
22019
Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment
Y Jang, J Lee, J Mok, J Park, SY Shin, SY Lee
RSC advances 13 (47), 33269-33275, 2023
12023
In-situ IGZO/ITON Heterostructure Phototransistor to Enhance Visible Light Detection
K Jang, Y Jang, S An, SY Lee
IEEE Electron Device Letters, 2024
2024
P‐20: Memory Window and Endurance Improvement of In‐Ga‐Zn‐O‐Based Ferroelectric Thin Film Transistors by Inserting In‐Ga‐Zn‐O Floating Gate
SY Shin, Y Jang, J Park, SY Lee
SID Symposium Digest of Technical Papers 55 (1), 1434-1437, 2024
2024
Metal Oxynitride Semiconductor for Ferroelectric HfZrOx Thin Film Devices
Y Jang, SY Shin, SY Lee
Proceedings of the International Display Workshops, 10.36463/idw.2023.0194, 2023
2023
48‐3: In‐Ga‐Zn‐O Synaptic Transistor with 1 µm Channel Length for Neuromorphic Computing
J Park, Y Jang, J Lee, SY Lee
SID Symposium Digest of Technical Papers 54 (1), 699-702, 2023
2023
P‐15: Student Poster: Charge Trap‐Based Synaptic Transistor Employing In‐Ga‐Zn‐O as Channel and Trap Layers for Bio‐Inspired Neuromorphic Computing
J Park, Y Jang, J Lee, SY Lee
SID Symposium Digest of Technical Papers 53 (1), 1092-1095, 2022
2022
A new method of generating Ga slope in Cu (In, Ga) Se2 film by controlling Se content in a multi-stacked precursor
SH Mun, Y Jang, RBV Chalapathy, BT Ahn, JH Ahn, JW Park, K Kim, ...
Current Applied Physics 21, 147-154, 2021
2021
Improving Performance of Cu (In, Ga) Se₂ Solar Cells by Cesium Post-Deposition Treatments
H Lee, Y Jang, SW Nam, C Jung, PP Choi, J Gwak, JH Yun, K Kim, B Shin
AFORE, 44-44, 2019
2019
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