Hiroshi AMANO  (天野 浩)
Hiroshi AMANO (天野 浩)
Nagoya University (名古屋大学)
在 nuee.nagoya-u.ac.jp 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
H Amano, N Sawaki, I Akasaki, Y Toyoda
Applied Physics Letters 48 (5), 353-355, 1986
30541986
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
H Amano, M Kito, K Hiramatsu, I Akasaki
Japanese journal of applied physics 28 (12A), L2112, 1989
27631989
Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells
T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, H Amano, ...
Japanese Journal of Applied Physics 36 (4A), L382, 1997
14041997
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE
I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki
Journal of crystal growth 98 (1-2), 209-219, 1989
10991989
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
I Akasaki, H Amano
Japanese journal of applied physics 36 (9R), 5393, 1997
7881997
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ...
Applied physics letters 73 (12), 1691-1693, 1998
7681998
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
7512006
Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells
T Takeuchi, H Amano, I Akasaki
Japanese Journal of Applied Physics 39 (2R), 413, 2000
6072000
Shortest wavelength semiconductor laser diode
I Akasaki, S Sota, H Sakai, T Tanaka, M Koike, H Amano
Electronics Letters 32 (12), 1105-1106, 1996
5731996
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
5512018
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED
I Akasaki, H Amano, M Kito, K Hiramatsu
Journal of luminescence 48, 666-670, 1991
4611991
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki
Journal of Crystal Growth 115 (1-4), 628-633, 1991
4461991
Optical properties of strained AlGaN and GaInN on GaN
T Takeuchi, H Takeuchi, S Sota, H Sakai, H Amano, I Akasaki
Japanese journal of applied physics 36 (2B), L177, 1997
3971997
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
3832019
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki
Thin Solid Films 163, 415-420, 1988
3831988
Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection
M Hiramatsu, K Shiji, H Amano, M Hori
Applied physics letters 84 (23), 4708-4710, 2004
3812004
ptype conduction in Mgdoped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
T Tanaka, A Watanabe, H Amano, Y Kobayashi, I Akasaki, S Yamazaki, ...
Applied physics letters 65 (5), 593-594, 1994
3621994
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki
Journal of crystal growth 128 (1-4), 391-396, 1993
3591993
Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain
T Detchprohm, K Hiramatsu, K Itoh, I Akasaki
Japanese journal of applied physics 31 (10B), L1454, 1992
3511992
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
T Detchprohm, K Hiramatsu, H Amano, I Akasaki
Applied physics letters 61 (22), 2688-2690, 1992
3331992
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