| Thermal conductivity of aluminum scandium nitride for 5G mobile applications and beyond Y Song, C Perez, G Esteves, JS Lundh, CB Saltonstall, TE Beechem, ... ACS Applied Materials & Interfaces 13 (16), 19031-19041, 2021 | 76 | 2021 |
| 130 mA mm− 1 £]-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ... Applied Physics Express 14 (7), 076502, 2021 | 60 | 2021 |
| Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ... Applied Physics Letters 112 (7), 2018 | 60 | 2018 |
| Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ... Journal of physics D: applied physics 56 (9), 093001, 2023 | 59 | 2023 |
| High-contrast and reversible polymer thermal regulator by structural phase transition R Shrestha, Y Luan, S Shin, T Zhang, X Luo, JS Lundh, W Gong, ... Science advances 5 (12), eaax3777, 2019 | 55 | 2019 |
| Polycrystalline diamond growth on £]-Ga2O3 for thermal management M Malakoutian, Y Song, C Yuan, C Ren, JS Lundh, RM Lavelle, JE Brown, ... Applied Physics Express 14 (5), 055502, 2021 | 48 | 2021 |
| Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications SK Oh, JS Lundh, S Shervin, B Chatterjee, DK Lee, S Choi, JS Kwak, ... Journal of Electronic Packaging 141 (2), 020801, 2019 | 47 | 2019 |
| Electro-thermal co-design of £]-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ... Applied Physics Letters 117 (15), 2020 | 46 | 2020 |
| Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor JS Lundh, B Chatterjee, Y Song, AG Baca, RJ Kaplar, TE Beechem, ... Applied Physics Letters 115 (15), 2019 | 43 | 2019 |
| A system to package perspective on transient thermal management of electronics HP De Bock, D Huitink, P Shamberger, JS Lundh, S Choi, N Niedbalski, ... Journal of Electronic Packaging 142 (4), 041111, 2020 | 33 | 2020 |
| Electro-thermal reliability study of GaN high electron mobility transistors B Chatterjee, JS Lundh, J Dallas, H Kim, S Choi 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical ¡K, 2017 | 28 | 2017 |
| Interdependence of Electronic and Thermal Transport in AlxGa1¡VxN Channel HEMTs B Chatterjee, JS Lundh, Y Song, D Shoemaker, AG Baca, RJ Kaplar, ... IEEE Electron Device Letters 41 (3), 461-464, 2020 | 25 | 2020 |
| 2D materials for universal thermal imaging of micro-and nanodevices: An application to gallium oxide electronics JS Lundh, T Zhang, Y Zhang, Z Xia, M Wetherington, Y Lei, E Kahn, ... ACS Applied Electronic Materials 2 (9), 2945-2953, 2020 | 23 | 2020 |
| Effect of Ge doping on growth stress and conductivity in AlxGa1-xN A Bansal, K Wang, JS Lundh, S Choi, JM Redwing Applied Physics Letters 114 (14), 2019 | 20 | 2019 |
| Device-level multidimensional thermal dynamics with implications for current and future wide bandgap electronics JS Lundh, Y Song, B Chatterjee, AG Baca, RJ Kaplar, AM Armstrong, ... Journal of Electronic Packaging 142 (3), 031113, 2020 | 19 | 2020 |
| Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending W Wang, J Chen, JS Lundh, S Shervin, SK Oh, S Pouladi, Z Rao, JY Kim, ... Applied Physics Letters 116 (12), 2020 | 16 | 2020 |
| Thermal performance of diamond field-effect transistors JS Lundh, D Shoemaker, AG Birdwell, JD Weil, LM De La Cruz, PB Shah, ... Applied Physics Letters 119 (14), 2021 | 11 | 2021 |
| The doping dependence of the thermal conductivity of bulk gallium nitride substrates Y Song, JS Lundh, W Wang, JH Leach, D Eichfeld, A Krishnan, C Perez, ... Journal of Electronic Packaging 142 (4), 041112, 2020 | 11 | 2020 |
| Integrated temperature mapping of lateral gallium nitride electronics JS Lundh, B Chatterjee, J Dallas, H Kim, S Choi 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical ¡K, 2017 | 10 | 2017 |
| Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy JS Lundh, K Coleman, Y Song, BA Griffin, G Esteves, EA Douglas, ... Journal of Applied Physics 130 (4), 2021 | 9 | 2021 |
Sukwon ChoiAssociate Professor of Mechanical Engineering, The Pennsylvania State UniversityVerified email at psu.edu
