| Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate R Elwaradi, J Mehta, TH Ngo, M Nemoz, C Bougerol, F Medjdoub, ... Journal of Applied Physics 133 (14), 2023 | 6 | 2023 |
| Robust Al0. 23Ga0. 77N channel HFETs on bulk AlN for high voltage power electronics J Mehta, I Abid, R Elwaradi, Y Cordier, F Medjdoub e-Prime-Advances in Electrical Engineering, Electronics and Energy 5, 100263, 2023 | 1 | 2023 |
| Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications R Elwaradi, E Frayssinet, S Chenot, Y Bouyer, M Nemoz, Y Cordier Microelectronic Engineering 277, 112017, 2023 | | 2023 |
| AlGaN channel high electron mobility transistors on bulk AlN substrate J Mehta, I Abid, R Elwaradi, Y Cordier, F Medjdoub International Workshop on Nitride Semiconductors, IWN 2022, 2022 | | 2022 |
| Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate R Elwaradi, C Bougerol, J Mehta, M Nemoz, F Medjdoub, Y Cordier WOCSDICE EXMATEC 2022, 2022 | | 2022 |
| Optimization of materials for microelectronics industry by in-situ coupling of electrical and structural characterization techniques R Elwaradi | | 2019 |
