关注
eric p kvam
eric p kvam
Professor, Materials Engineering, Purdue University
在 purdue.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Dislocation nucleation near the critical thickness in GeSi/Si strained layers
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
1971989
Variation of dislocation morphology with strain in GexSi1− x epilayers on (100) Si
EP Kvam, DM Maher, CJ Humphreys
Journal of Materials Research 5 (9), 1900-1907, 1990
1311990
Surface orientation and stacking fault generation in strained epitaxial growth
EP Kvam, R Hull
Journal of applied physics 73 (11), 7407-7411, 1993
641993
Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions
C Varanasi, PJ McGinn, V Pavate, EP Kvam
Physica C: Superconductivity 221 (1-2), 46-52, 1994
591994
Development of epitaxial AlxSc1−xN for artificially structured metal/semiconductor superlattice metamaterials
B Saha, S Saber, GV Naik, A Boltasseva, EA Stach, EP Kvam, TD Sands
physica status solidi (b) 252 (2), 251-259, 2015
562015
Xray topography of the coherency breakdown in GexSi1−x/Si(100)
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, GS Green, ...
Applied physics letters 53 (21), 2083-2085, 1988
541988
New Source of Dislocations in Strained Epitaxial Layers
DJ Eaglesham, DM Maher, EP Kvam, JC Bean, CJ Humphreys
Physical review letters 62 (2), 187, 1989
501989
The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers
EP Kvam, DJ Eaglesham, DM Maher, CJ Humphreys, JC Bean, GS Green, ...
MRS Online Proceedings Library (OPL) 104, 623, 1987
421987
Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy
MA Capano, BC Kim, AR Smith, EP Kvam, S Tsoi, AK Ramdas
Journal of applied physics 100 (8), 2006
382006
Synthesis and optimization of a new starch-based adsorbent for dehumidification of air in a pressure-swing dryer
LE Anderson, M Gulati, PJ Westgate, EP Kvam, K Bowman, MR Ladisch
Industrial & engineering chemistry research 35 (4), 1180-1187, 1996
331996
Crosssection transmission electron microscopy study of carbonimplanted layers in silicon
H Wong, J Lou, NW Cheung, EP Kvam, KM Yu, DA Olson, J Washburn
Applied physics letters 57 (8), 798-800, 1990
331990
Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold
EP Kvam, RW Balluffi
Philosophical Magazine A 56 (1), 137-148, 1987
321987
Effect of enzyme modification of corn grits on their properties as an adsorbent in a skarstrom pressure swing cycle dryer
KE Beery, M Gulati, EP Kvam, MR Ladisch
Adsorption 4, 321-335, 1998
251998
Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox
C Varanasi, PJ McGinn, V Pavate, EP Kvam
Journal of materials research 10 (9), 2251-2256, 1995
251995
Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy
A Zanota, EP Kvam, D Balkin, PJ McGinn
Applied physics letters 62 (21), 2722-2724, 1993
251993
Deformation induced defects in ReBa2Cu3O7− δ
MJ Kramer, LS Chumbley, RW McCallum, WJ Nellis, S Weir, EP Kvam
Physica C: Superconductivity 166 (1-2), 115-124, 1990
251990
Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface
V Gopal, EP Kvam, TP Chin, JM Woodall
Applied physics letters 72 (18), 2319-2321, 1998
241998
Possible dislocation multiplication source in (001) semiconductor epitaxy
J Washburn, EP Kvam
Applied physics letters 57 (16), 1637-1639, 1990
231990
Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy
EP Kvam
Journal of electronic materials 23, 1021-1026, 1994
221994
The origin of dislocations in multilayers
CJ Humphreys, DM Maher, DJ Eaglesham, EP Kvam, IG Salisbury
Journal de Physique III 1 (6), 1119-1130, 1991
221991
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