| Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors J Kuzmik, G Pozzovivo, C Ostermaier, G Strasser, D Pogany, E Gornik, ... Journal of Applied Physics 106 (12), 2009 | 141 | 2009 |
| Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $ J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ... IEEE Transactions on Electron Devices 55 (3), 937-941, 2008 | 120 | 2008 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 119 | 2009 |
| Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Electron Device Letters 35 (4), 443-445, 2014 | 110 | 2014 |
| MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs S Abermann, G Pozzovivo, J Kuzmik, G Strasser, D Pogany, JF Carlin, ... Semiconductor Science and Technology 22 (12), 1272, 2007 | 99 | 2007 |
| Gate insulation and drain current saturation mechanism in InAlN∕ GaN metal-oxide-semiconductor high-electron-mobility transistors G Pozzovivo, J Kuzmik, S Golka, W Schrenk, G Strasser, D Pogany, ... Applied Physics Letters 91 (4), 2007 | 95 | 2007 |
| Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation C Ostermaier, G Pozzovivo, JFÇ Carlin, B Basnar, W Schrenk, Y Douvry, ... IEEE Electron Device Letters 30 (10), 1030-1032, 2009 | 79 | 2009 |
| Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ... Applied physics letters 90 (22), 2007 | 74 | 2007 |
| Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs J Kuzmik, JF Carlin, M Gonschorek, A Kostopoulos, G Konstantinidis, ... physica status solidi (a) 204 (6), 2019-2022, 2007 | 67 | 2007 |
| Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures M Ťapajna, K Čičo, J Kuzmík, D Pogany, G Pozzovivo, G Strasser, ... Semiconductor science and technology 24 (3), 035008, 2009 | 48 | 2009 |
| Electrooptical modulator at telecommunication wavelengths based on GaN–AlN coupled quantum wells N Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ... IEEE Photonics Technology Letters 20 (9), 724-726, 2008 | 48 | 2008 |
| Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes D Donoval, A Chvála, R Šramatý, J Kováč, JF Carlin, N Grandjean, ... Applied Physics Letters 96 (22), 2010 | 47 | 2010 |
| Proposal and Performance Analysis of Normally Off GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier J Kuzmik, C Ostermaier, G Pozzovivo, B Basnar, W Schrenk, JF Carlin, ... IEEE transactions on electron devices 57 (9), 2144-2154, 2010 | 45 | 2010 |
| Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors M Huber, M Silvestri, L Knuuttila, G Pozzovivo, A Andreev, A Kadashchuk, ... Applied Physics Letters 107 (3), 2015 | 41 | 2015 |
| Lattice-Matched GaN–InAlN Waveguides at m Grown by Metal–Organic Vapor Phase Epitaxy A Lupu, FH Julien, S Golka, G Pozzovivo, G Strasser, E Baumann, ... IEEE Photonics Technology Letters 20 (2), 102-104, 2008 | 33 | 2008 |
| Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ... Applied surface science 258 (8), 3444-3449, 2012 | 32 | 2012 |
| Bi‐stable behaviour in GaN‐based resonant tunnelling diode structures S Leconte, S Golka, G Pozzovivo, G Strasser, T Remmele, M Albrecht, ... physica status solidi c 5 (2), 431-434, 2008 | 29 | 2008 |
| GaN power semiconductors for PV inverter applications-Opportunities and risks T Stubbe, R Mallwitz, R Rupp, G Pozzovivo, W Bergner, O Haeberlen, ... CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014 | 28 | 2014 |
| Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ... Electronics letters 45 (11), 570-572, 2009 | 27 | 2009 |
| Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli Applied Surface Science 256 (16), 5031-5034, 2010 | 25 | 2010 |
