| Total-ionizing-dose effects on 3D sequentially integrated, fully depleted silicon-on-insulator MOSFETs S Toguchi, EX Zhang, M Gorchichko, DM Fleetwood, RD Schrimpf, ... IEEE Electron Device Letters 41 (4), 637-640, 2020 | 17 | 2020 |
| Charge trapping and transconductance degradation in irradiated 3-D sequentially integrated FDSOI MOSFETs S Toguchi, EX Zhang, DM Fleetwood, RD Schrimpf, RA Reed, S Moreau, ... IEEE Transactions on Nuclear Science 68 (5), 707-715, 2021 | 8 | 2021 |
| Effects of layer-to-layer coupling on the total-ionizing-dose response of 3-D-sequentially integrated FD-SOI MOSFETs S Toguchi, EX Zhang, MW Rony, X Luo, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 69 (7), 1420-1427, 2021 | 5 | 2021 |
| Negative-bias-stress and total-ionizing-dose effects in deeply scaled Ge-GAA nanowire pFETs MW Rony, EX Zhang, S Toguchi, X Luo, M Reaz, K Li, D Linten, J Mitard, ... IEEE Transactions on Nuclear Science 69 (3), 299-306, 2022 | 3 | 2022 |
| Total-ionizing-dose effects on 3D sequentially-integrated FDSOI ring oscillators S Toguchi, EX Zhang, DM Fleetwood, RD Schrimpf, S Moreau, P Batude, ... IEEE Transactions on Nuclear Science, 2023 | 2 | 2023 |
| Charge Trapping in Irradiated 3D Devices and ICs EX Zhang, S Toguchi, ZX Guo, ML Alles, RD Schrimpf, DM Fleetwood 2024 IEEE International Reliability Physics Symposium (IRPS), 10C. 3-1-10C. 3-6, 2024 | | 2024 |
| Total-Ionizing-Dose Effects on 3D Sequentially Integrated FDSOI Devices and Circuits S Toguchi | | 2022 |
| Effects of SiH Groups on ELDRS Quantified by XPS with Combined Use of Gamma-ray and Electron-beam Irradiation S Toguchi, D Kobayashi, T Makino, T Ohshima, K Hirose 2017 17th European Conference on Radiation and Its Effects on Components and …, 2017 | | 2017 |
