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Irene Geijselaers
Irene Geijselaers
Solid State Physics, Lund University
Verified email at ftf.lth.se
Title
Cited by
Cited by
Year
Intersubband quantum disc-in-nanowire photodetectors with normal-incidence response in the long-wavelength infrared
M Karimi, M Heurlin, S Limpert, V Jain, X Zeng, I Geijselaers, A Nowzari, ...
Nano letters 18 (1), 365-372, 2018
392018
n-type doping and morphology of GaAs nanowires in Aerotaxy
W Metaferia, S Sivakumar, AR Persson, I Geijselaers, LR Wallenberg, ...
Nanotechnology 29 (28), 285601, 2018
252018
Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping
I Geijselaers, S Lehmann, KA Dick, ME Pistol
Applied Physics Letters 116 (23), 232103, 2020
112020
Atomically sharp, crystal phase defined GaAs quantum dots
I Geijselaers, N Vainorius, S Lehmann, CE Pryor, KA Dick, ME Pistol
Applied Physics Letters 119 (26), 263102, 2021
102021
Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates
RJ Jam, AR Persson, E Barrigón, M Heurlin, I Geijselaers, VJ Gómez, ...
Nanoscale 12 (2), 888-894, 2020
92020
Radial band bending at wurtzite–zinc-blende–GaAs interfaces
I Geijselaers, S Lehmann, KA Dick, ME Pistol
Nano Futures 2 (3), 035002, 2018
92018
Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy
B Khanbabaee, G Bussone, JV Knutsson, I Geijselaers, CE Pryor, ...
Journal of Applied Physics 120 (14), 145703, 2016
82016
Optical studies of crystal phase heterostructures
I Geijselaers
Division of Solid State Physics, Department of Physics, Lund University, 2021
2021
Doping of GaAsP nanowires grown by aerotaxy
S Sivakumar, I Geijselaers, A Persson, R Wallenberg, K Deppert, ...
21th International Vacuum Congress, 2019
2019
n-type doping and morphology of GaAs nanowires in Aerotaxy
AR Persson, I Geijselaers, LR Wallenberg, K Deppert, L Samuelson, ...
Nanotechnology 29 (285601), 8pp, 2018
2018
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