| Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma IH Hwang, HY Cha, KS Seo Coatings 11 (3), 268, 2021 | 20 | 2021 |
| High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure MJ Kang, MS Lee, GH Choi, IH Hwang, HY Cha, KS Seo physica status solidi (a) 214 (8), 1600726, 2017 | 17 | 2017 |
| High‐performance e‐mode algan/gan mis‐hemt with dual gate insulator employing sion and hfon IH Hwang, SK Eom, GH Choi, MJ Kang, JG Lee, HY Cha, KS Seo Physica status solidi (a) 215 (10), 1700650, 2018 | 14 | 2018 |
| Crystalline AlN interfacial layer on GaN using plasma-enhanced atomic layer deposition IH Hwang, MJ Kang, HY Cha, KS Seo Crystals 11 (4), 405, 2021 | 7 | 2021 |
| Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator SH Roh, SK Eom, GH Choi, MJ Kang, DH Kim, IH Hwang, KS Seo, JG Lee, ... Journal of the Korean Physical Society 71, 185-190, 2017 | 2 | 2017 |
