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Fengtao yang
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A method to balance dynamic current of paralleled SiC MOSFETs with kelvin connection based on response surface model and nonlinear optimization
C Zhao, L Wang, F Zhang, F Yang
IEEE Transactions on Power Electronics 36 (2), 2068-2079, 2020
472020
Interleaved planar packaging method of multichip SiC power module for thermal and electrical performance improvement
F Yang, L Jia, L Wang, F Zhang, B Wang, C Zhao, J Wang, CF Bayer, ...
IEEE Transactions on Power Electronics 37 (2), 1615-1629, 2021
452021
Cu clip-bonding method with optimized source inductance for current balancing in multichip SiC MOSFET power module
L Wang, T Zhang, F Yang, D Ma, C Zhao, Y Pei, Y Gan
IEEE Transactions on Power Electronics 37 (7), 7952-7964, 2022
402022
Thermal performances and annual damages comparison of MMC using reverse conducting IGBT and conventional IGBT module
B Wang, L Wang, W Mu, M Qin, F Yang, J Liu, Y Tomoyuki, F Tatsuhiko
IEEE Transactions on Power Electronics 36 (9), 9806-9825, 2021
392021
Direct integration of optimized phase-change heat spreaders into SiC power module for thermal performance improvements under high heat flux
W Mu, L Wang, B Wang, T Zhang, F Yang, Y Gan, H Zhang
IEEE Transactions on Power Electronics 37 (5), 5398-5410, 2021
302021
Air-cooling system optimization for IGBT modules in MMC using embedded O-shaped heat pipes
B Wang, L Wang, F Yang, W Mu, M Qin, F Zhang, D Ma, J Wang, J Liu
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2021
252021
A transient 3-D thermal modeling method for IGBT modules considering uneven power losses and cooling conditions
J Wang, W Chen, L Wang, B Wang, C Zhao, D Ma, F Yang, Y Li
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020
222020
A highly integrated multichip SiC MOSFET power module with optimized electrical and thermal performances
D Ma, G Xiao, T Zhang, F Yang, M Zhu, T Yuan, L Ma, Y Gan, L Wang
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (2 …, 2022
192022
Compact-interleaved packaging method of power module with dynamic characterization of 4H-SiC MOSFET and development of power electronic converter at extremely high junction …
F Yang, L Wang, H Kong, M Zhu, X Liu, X Lu, M Qin, T Zhang, Y Gan, L Jia
IEEE Transactions on Power Electronics 38 (1), 417-434, 2022
162022
Investigation and comparison of temperature-sensitive electrical parameters of SiC MOSFET at extremely high temperatures
X Lu, L Wang, Q Yang, F Yang, Y Gan, H Zhang
IEEE Transactions on Power Electronics 38 (8), 9660-9672, 2023
102023
The study on thermal coupling effect for SiC power module design guidelines
F Yang, L Jia, L Wang, C Zhao, J Wang, T Zhang, Y Gan, H Zhang
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020
72020
A method to minimize junction temperature difference of dies in multichip power modules
C Zhao, L Wang, Y Xu, F Yang, J Wang, Z Qi
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 3318-3324, 2019
72019
A lifetime estimation method of MMC submodules based on the combination of FEA and physical lifetime model
B Wang, J Wang, D Ma, L Wang, F Yang, X Li, Y Tan
2019 10th International Conference on Power Electronics and ECCE Asia (ICPE …, 2019
72019
Investigation of two high-temperature bipolar phenomena and characteristics of 1.2 kV SiC power diodes for high-temperature applications
M Zhu, Y Pei, F Yang, Z Xue, D Ma, L Wang
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023
62023
A highly integrated GaN power module with low parasitic inductance and high thermal performance
H Kong, F Yang, C Yang, Y Zhang, Z Wang, Y Yao, Y Wang, L Wang
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022
62022
Analysis and optimization of high-frequency switching oscillation conducted CM current considering parasitic parameters based on a half-bridge power module
Q Yang, L Wang, Z Qi, X Lu, Z Ma, F Yang, H Wang
IEEE Transactions on Power Electronics, 2023
52023
Three-Dimensional Integrated GaN-based DC-DC Converter with an Inductor Substrate
Z Qi, C Zhao, L Wang, F Yang, Y Pei, Z Zheng
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 832-838, 2019
52019
An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range
M Zhu, Y Pei, F Yang, Z Cheng, D Ma, L Wang
IEEE Transactions on Power Electronics, 2024
42024
Immersion oil cooling method of discrete SiC power device in electric vehicle
F Yang, C Liu, J Shen
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-5, 2022
42022
An evaluation on thermal performance improvements for sic power module integrated with vapor chamber in mmc
B Wang, L Wang, S Wu, Z Hou, W Mu, F Yang, J Liu, Y Gan
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021
42021
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