| High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors S Das, T Isaacs-Smith, A Ahyi, MA Kuroda, S Dhar Journal of Applied Physics 130 (22), 2021 | 9 | 2021 |
| Study of carrier mobilities in 4H-SiC MOSFETS using Hall analysis S Das, Y Zheng, A Ahyi, MA Kuroda, S Dhar Materials 15 (19), 6736, 2022 | 7 | 2022 |
| Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing S Das, H Gu, L Wang, A Ahyi, LC Feldman, E Garfunkel, MA Kuroda, ... Journal of Applied Physics 133 (21), 2023 | 1 | 2023 |
| Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC S Das, DJ Lichtenwalner, H Dixit, S Rogers, A Scholze, SH Ryu Journal of Electronic Materials, 1-5, 2024 | | 2024 |
| Fabrication and Characterization of High Temperature P-channel 4H-SiC MOSFETs S Das | | 2022 |
| Nitrogen Annealing As a Sustainable Method for Interface Trap Passivation in 4H-SiC Mosfets S Das, H Gu, L Wang, A Ahyi, LC Feldman, E Garfunkel, M Kuroda, ... Electrochemical Society Meeting Abstracts 242, 817-817, 2022 | | 2022 |
| (Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels S Dhar, S Das, A Ahyi, M Kuroda Electrochemical Society Meeting Abstracts 241, 1317-1317, 2022 | | 2022 |
| Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis. Materials 2022, 15, 6736 S Das, Y Zheng, A Ahyi, MA Kuroda, S Dhar s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022 | | 2022 |
| Interface States Passivation for p-Channel 4H-SiC MOS Devices S Das, T Isaacs-smith, A Ahyi, M Kuroda, S Dhar Electrochemical Society Meeting Abstracts 240, 993-993, 2021 | | 2021 |
| High Temperature Characteristics of NO Annealed P-Channel 4H-SiC MOSFET S Das, T Isaacs-Smith, A Ahyi, M A. Kuroda, S Dhar 63rd Electronic Materials Conference, 2021 | | 2021 |
Ayayi Claude AhyiAuburn UniversityVerified email at auburn.edu
