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Suman Das, PhD
Suman Das, PhD
Research Scientist III, Wolfspeed
Verified email at auburn.edu
Title
Cited by
Cited by
Year
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
S Das, T Isaacs-Smith, A Ahyi, MA Kuroda, S Dhar
Journal of Applied Physics 130 (22), 2021
92021
Study of carrier mobilities in 4H-SiC MOSFETS using Hall analysis
S Das, Y Zheng, A Ahyi, MA Kuroda, S Dhar
Materials 15 (19), 6736, 2022
72022
Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC
S Das, DJ Lichtenwalner, H Dixit, S Rogers, A Scholze, SH Ryu
Journal of Electronic Materials, 1-5, 2024
2024
Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing
S Das, H Gu, L Wang, A Ahyi, LC Feldman, E Garfunkel, MA Kuroda, ...
Journal of Applied Physics 133 (21), 2023
2023
Fabrication and Characterization of High Temperature P-channel 4H-SiC MOSFETs
S Das
2022
Nitrogen Annealing As a Sustainable Method for Interface Trap Passivation in 4H-SiC Mosfets
S Das, H Gu, L Wang, A Ahyi, LC Feldman, E Garfunkel, M Kuroda, ...
Electrochemical Society Meeting Abstracts 242, 817-817, 2022
2022
(Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels
S Dhar, S Das, A Ahyi, M Kuroda
Electrochemical Society Meeting Abstracts 241, 1317-1317, 2022
2022
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis. Materials 2022, 15, 6736
S Das, Y Zheng, A Ahyi, MA Kuroda, S Dhar
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022
2022
Interface States Passivation for p-Channel 4H-SiC MOS Devices
S Das, T Isaacs-smith, A Ahyi, M Kuroda, S Dhar
Electrochemical Society Meeting Abstracts 240, 993-993, 2021
2021
High Temperature Characteristics of NO Annealed P-Channel 4H-SiC MOSFET
S Das, T Isaacs-Smith, A Ahyi, M A. Kuroda, S Dhar
63rd Electronic Materials Conference, 2021
2021
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