Yanqing Wu
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Tunable infrared plasmonic devices using graphene/insulator stacks
H Yan, X Li, B Chandra, G Tulevski, Y Wu, M Freitag, W Zhu, P Avouris, ...
Nature nanotechnology 7 (5), 330-334, 2012
Wafer-scale graphene integrated circuit
YM Lin, A Valdes-Garcia, SJ Han, DB Farmer, I Meric, Y Sun, Y Wu, ...
Science 332 (6035), 1294-1297, 2011
High-frequency, scaled graphene transistors on diamond-like carbon
Y Wu, Y Lin, AA Bol, KA Jenkins, F Xia, DB Farmer, Y Zhu, P Avouris
Nature 472 (7341), 74-78, 2011
Damping pathways of mid-infrared plasmons in graphene nanostructures
H Yan, T Low, W Zhu, Y Wu, M Freitag, X Li, F Guinea, P Avouris, F Xia
Nature Photonics 7 (5), 394-399, 2013
The origins and limits of metal–graphene junction resistance
F Xia, V Perebeinos, Y Lin, Y Wu, P Avouris
Nature nanotechnology 6 (3), 179-184, 2011
State-of-the-art graphene high-frequency electronics
Y Wu, KA Jenkins, A Valdes-Garcia, DB Farmer, Y Zhu, AA Bol, ...
Nano letters 12 (6), 3062-3067, 2012
Compound Semiconductor Devices-Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al2O3 as Gate Dielectric
Y Xuan, YQ Wu, HC Lin, T Shen, PD Ye
IEEE Electron Device Letters 28 (11), 935-938, 2007
InP-based transistor fabrication
P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza
US Patent 8,329,541, 2012
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y Xuan, YQ Wu, PD Ye
IEEE Electron Device Letters 29 (4), 294-296, 2008
Broadband black‐phosphorus photodetectors with high responsivity
M Huang, M Wang, C Chen, Z Ma, X Li, J Han, Y Wu
Advanced Materials 28 (18), 3481-3485, 2016
Top-gated graphene field-effect-transistors formed by decomposition of SiC
YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ...
Applied Physics Letters 92 (9), 092102, 2008
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye
Applied Physics Letters 92 (1), 013101, 2008
Multifunctional high-performance van der Waals heterostructures
M Huang, S Li, Z Zhang, X Xiong, X Li, Y Wu
Nature nanotechnology 12 (12), 1148-1154, 2017
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Depositedas Gate Dielectric
Y Xuan, YQ Wu, HC Lin, T Shen, DY Peide
IEEE Electron Device Letters 28 (11), 935-938, 2007
Three-terminal graphene negative differential resistance devices
Y Wu, DB Farmer, W Zhu, SJ Han, CD Dimitrakopoulos, AA Bol, P Avouris, ...
ACS nano 6 (3), 2610-2616, 2012
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye
Applied Physics Letters 95 (17), 172105, 2009
Nanometre-thin indium tin oxide for advanced high-performance electronics
S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu
Nature Materials 18 (10), 1091-1097, 2019
First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach
JJ Gu, YQ Liu, YQ Wu, R Colby, RG Gordon, PD Ye
2011 International Electron Devices Meeting, 33.2. 1-33.2. 4, 2011
Graphene electronics: Materials, devices, and circuits
Y Wu, DB Farmer, F Xia, P Avouris
Proceedings of the IEEE 101 (7), 1620-1637, 2013
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2and HfAlO as gate dielectrics
Y Xuan, YQ Wu, T Shen, T Yang, PD Ye
2007 IEEE International Electron Devices Meeting, 637-640, 2007
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