| Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack MH Cho, CH Choi, HJ Seul, HC Cho, JK Jeong ACS Applied Materials & Interfaces 13 (14), 16628-16640, 2021 | 101 | 2021 |
| Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer MH Cho, H Seol, A Song, S Choi, Y Song, PS Yun, KB Chung, JU Bae, ... IEEE Transactions on Electron Devices 66 (4), 1783-1788, 2019 | 91 | 2019 |
| Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition MH Cho, MJ Kim, H Seul, PS Yun, JU Bae, KS Park, JK Jeong Journal of Information Display, 2018 | 55 | 2018 |
| High-performance amorphous indium gallium zinc oxide thin-film transistors fabricated by atomic layer deposition MH Cho, H Seol, H Yang, PS Yun, JU Bae, KS Park, JK Jeong IEEE Electron Device Letters 39 (5), 688-691, 2018 | 54 | 2018 |
| High-performance thin-film transistors with an atomic-layer-deposited indium gallium oxide channel: A cation combinatorial approach HJ Yang, HJ Seul, MJ Kim, Y Kim, HC Cho, MH Cho, YH Song, H Yang, ... ACS applied materials & interfaces 12 (47), 52937-52951, 2020 | 53 | 2020 |
| Atomic layer deposition process-enabled carrier mobility boosting in field-effect transistors through a nanoscale ZnO/IGO heterojunction HJ Seul, MJ Kim, HJ Yang, MH Cho, MH Cho, WB Song, JK Jeong ACS applied materials & interfaces 12 (30), 33887-33898, 2020 | 51 | 2020 |
| Comparative study of atomic layer deposited indium-based oxide transistors with a Fermi energy level-engineered heterojunction structure channel through a cation combinatorial … MH Cho, CH Choi, JK Jeong ACS Applied Materials & Interfaces 14 (16), 18646-18661, 2022 | 27 | 2022 |
| Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks HJ Seul, JH Cho, JS Hur, MH Cho, MH Cho, MT Ryu, JK Jeong Journal of Alloys and Compounds 903, 163876, 2022 | 17 | 2022 |
| Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications MH Cho, CH Choi, JK Jeong Journal of the Society for Information Display 30 (3), 175-197, 2022 | 16 | 2022 |
| High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition MH Cho, CH Choi, MJ Kim, JS Hur, T Kim, JK Jeong ACS Applied Materials & Interfaces 15 (15), 19137-19151, 2023 | 10 | 2023 |
| P‐13: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach MH Cho, H Seol, N On, TK Kim, PS Yun, JU Bae, KS Park, JK Jeong SID Symposium Digest of Technical Papers 50 (1), 1259-1262, 2019 | 4 | 2019 |
| 15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs MH Cho, HJ Seul, JK Jeong SID Symposium Digest of Technical Papers 52, 206-209, 2021 | 1 | 2021 |
Jae Kyeong JeongHanyang Univ.Verified email at hanyang.ac.kr
