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Thomas Hantschel
Thomas Hantschel
Verified email at imec.be
Title
Cited by
Cited by
Year
Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
P De Wolf, R Stephenson, T Trenkler, T Clarysse, T Hantschel, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
2332000
Highly conductive diamond probes for scanning spreading resistance microscopy
T Hantschel, P Niedermann, T Trenkler, W Vandervorst
Applied Physics Letters 76 (12), 1603-1605, 2000
1252000
Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy
P De Wolf, M Geva, T Hantschel, W Vandervorst, RB Bylsma
Applied physics letters 73 (15), 2155-2157, 1998
991998
Heterojunction photovoltaic cell
T Hantschel, K Littau, S Elrod
US Patent App. 11/017,380, 2006
96*2006
Evaluating probes for “electrical” atomic force microscopy
T Trenkler, T Hantschel, R Stephenson, P De Wolf, W Vandervorst, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
892000
Extrusion/dispensing systems and methods
DK Fork, T Hantschel
US Patent 7,765,949, 2010
772010
Silica gel solid nanocomposite electrolytes with interfacial conductivity promotion exceeding the bulk Li-ion conductivity of the ionic liquid electrolyte filler
X Chen, B Put, A Sagara, K Gandrud, M Murata, JA Steele, H Yabe, ...
Science Advances 6 (2), eaav3400, 2020
742020
Conductive diamond tips with sub‐nanometer electrical resolution for characterization of nanoelectronics device structures
T Hantschel, C Demeulemeester, P Eyben, V Schulz, O Richard, ...
physica status solidi (a) 206 (9), 2077-2081, 2009
682009
Probe tip configuration and a method of fabrication thereof
T Hantschel, W Vandervorst
US Patent 6,504,152, 2003
682003
Laser-induced periodic surface structures (LIPSS) on heavily boron-doped diamond for electrode applications
AF Sartori, S Orlando, A Bellucci, DM Trucchi, S Abrahami, T Boehme, ...
ACS applied materials & interfaces 10 (49), 43236-43251, 2018
642018
Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
DK Fork, T Hantschel
US Patent 7,799,371, 2010
642010
Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts
X Ke, S Bals, D Cott, T Hantschel, H Bender, G Van Tendeloo
Microscopy and Microanalysis 16 (2), 210-217, 2010
632010
Evaluation of the electrical contact area in contact-mode scanning probe microscopy
U Celano, T Hantschel, G Giammaria, RC Chintala, T Conard, H Bender, ...
Journal of Applied Physics 117 (21), 2015
622015
Scanning probe system with spring probe and actuation/sensing structure
T Hantschel, EM Chow, DK Fork, MA Rosa, D De Bruyker
US Patent 6,734,425, 2004
622004
Probe and method of manufacturing mounted AFM probes
T Hantschel, W Vandervorst
US Patent 6,690,008, 2004
592004
J-springs-innovative compliant interconnects for next-generation packaging
L Ma, Q Zhu, T Hantschel, DK Fork, SK Sitaraman
52nd Electronic Components and Technology Conference 2002.(Cat. No …, 2002
532002
Carbon nanotube growth for through silicon via application
R Xie, C Zhang, MH Van der Veen, K Arstila, T Hantschel, B Chen, ...
Nanotechnology 24 (12), 125603, 2013
522013
Observation of diameter dependent carrier distribution in nanowire-based transistors
A Schulze, T Hantschel, P Eyben, AS Verhulst, R Rooyackers, ...
Nanotechnology 22 (18), 185701, 2011
512011
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
P Eyben, F Clemente, K Vanstreels, G Pourtois, T Clarysse, E Duriau, ...
Journal of Vacuum Science & Technology B 28 (2), 401-406, 2010
512010
Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects
A Schulze, T Hantschel, A Dathe, P Eyben, X Ke, W Vandervorst
Nanotechnology 23 (30), 305707, 2012
492012
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